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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
IRF640N IRF640NL IRF640NS
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| OCR Text |
....5% MAX
Figure 8. Saturation charactoristics
1.2 VGS = VDS, ID = 250A
NORMALIZED DRAIN TO SOURCE ON RESISTANCE
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
0.8
0.6 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
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| Description |
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-CHANNEL POWER MOSFETS 200V, 18A, 0.15OHM
N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm
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| File Size |
151.73K /
11 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD12MVS1
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| OCR Text |
...00mA Zg=ZI=50 ohm Po
Vgs-Ids charactoristics 2 5 4 8 Vds=10V Tc=-25~+75C 6 Ids(A),GM(S) +25C
-25C +75C
Idd
3 Idd(A)
4
10 5 0 4 6 8 Vdd(V) 10 12
2 1 0
2
0 0 2 4 Vgs(V) 6 8
RD12MVS1
MITSUBISHI ELECTRIC 3/7
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| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
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| File Size |
428.96K /
7 Page |
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