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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BF543 Q62702-F1372
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| OCR Text |
...
IDSS - VGS(p)
gfs Cgss Cdg cdss Gp
9.5 - - - -
12 2.7 18 0.9 22
- - - - -
mS pF fF pF dB
F
-
1
-
Semiconductor Group
2
BF 543
Total power dissipation Ptot = f (TA)
Typ. output characteristics ID =... |
| Description |
From old datasheet system Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
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| File Size |
97.28K /
5 Page |
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it Online |
Download Datasheet
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BF999 Q62702-F1132
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| OCR Text |
... 2 mS, GL = 0.5 mS gfs Cgss Cdg cdss Gp 14 - - - - 16 2.5 25 1 25 - - - - - mS pF fF pF dB
F
-
1
-
Semiconductor Group
2
BF 999
Total power dissipation Ptot = f (TA)
Output characteristics ID = f (VDS)
Gate tra... |
| Description |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications) From old datasheet system Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
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| File Size |
116.19K /
5 Page |
View
it Online |
Download Datasheet
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|
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INFINEON[Infineon Technologies AG]
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| Part No. |
BF2040R BF2040W BF2040
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| OCR Text |
... 45 50 F 1.6 2.2 dB Gp 20 23 dB cdss 1.6 Cg1ss 2.9 3.4 pF gfs 37 42 mS Values typ. max. Unit
3
Feb-25-2004
BF2040...
Total power dissipation Ptot = (TS) BF2040, BFD2040R Total power dissipation Ptot = (TS) BF2040W
220
mW
22... |
| Description |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Silicon N-Channel MOSFET Tetrode
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| File Size |
259.60K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BF5030W
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| OCR Text |
...8 G p 45 1 1.3 F 35 dB 24 Gp dB cdss 1.6 Cg1ss 2.7 pF g fs 41 mS typ. max.
Unit
3
2006-04-13
BF5030...
Total power dissipation Ptot = (TS) Drain current ID = (IG1) VG2S = 3V
300 30
mW
mA
P tot
200
20
150
I... |
| Description |
Silicon N-Channel MOSFET Tetrode
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| File Size |
164.69K /
10 Page |
View
it Online |
Download Datasheet
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