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LLZ11A BAV99RWT A9227M MAX30 PN4014 1001A KIA7734P 00101
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    TPC8016-H

Toshiba Corporation
Toshiba Semiconductor
Part No. TPC8016-H
OCR Text ...ted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 ...H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)

File Size 76.69K  /  7 Page

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    TOSHIBA
Part No. TPC8006-H
OCR Text ... on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 1.0 mh...h (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) tpc8006-h 200...
Description Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications

File Size 310.17K  /  7 Page

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    HYMD525G726BSP4M-H HYMD525G726BSP4M-K HYMD525G726BSP4M-L HYMD525G726BSP4-H HYMD525G726BSP4-K HYMD525G726BSP4-L HYMD525G7

Hynix Semiconductor
Part No. HYMD525G726BSP4M-H HYMD525G726BSP4M-K HYMD525G726BSP4M-L HYMD525G726BSP4-H HYMD525G726BSP4-K HYMD525G726BSP4-L HYMD525G726BS4-H HYMD525G726BS4-K HYMD525G726BS4-L HYMD525G726BS4M-H HYMD525G726BS4M-K HYMD525G726BS4M-L
OCR Text B ver. (TSOP) This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packa...H DDR266B 2.5-3-3 133 133 -L DDR200 2-2-2 100 100 Unit CK MHz MHz MHz Rev. 1.1 / May. 2005 1 This...
Description 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. (TSOP)

File Size 213.76K  /  18 Page

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    LA93B-3-H-PF

LIGITEK electronics co., ltd.
Part No. LA93B-3-H-PF
OCR Text ...6 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature...
Description LED ARRAY

File Size 118.96K  /  6 Page

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    LA93B-3R-H-PF

LIGITEK electronics co., ltd.
Part No. LA93B-3R-H-PF
OCR Text ...6 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature...
Description LED ARRAY

File Size 119.01K  /  6 Page

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    LA93B-4-H-S2-PF

LIGITEK electronics co., ltd.
Part No. LA93B-4-H-S2-PF
OCR Text ...6 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature...
Description LED ARRAY

File Size 103.41K  /  6 Page

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    LA93B-4-H-S3-PF

LIGITEK electronics co., ltd.
Part No. LA93B-4-H-S3-PF
OCR Text ...6 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature...
Description LED ARRAY

File Size 103.24K  /  6 Page

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    TOSHIBA
Part No. TPCP8007-H
OCR Text ...on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 500 h, r g = 1 , i ar = 5 a note 4: repetitive rating: pulse width limited by m...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 177.46K  /  7 Page

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    TPC8005-H

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPC8005-H
OCR Text ...ted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 ...H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current...
Description CONNECTOR ACCESSORY
Silicon N Channel MOS Type (High Speed U−MOS)
Silicon N Channel MOS Type (High Speed U-MOS)

File Size 510.11K  /  7 Page

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