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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2306PCBA RF2306
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| OCR Text |
amplifiers * Driver Stage for power amplifiers * Final PA for Low power Applications * Portable Battery powered Equipment * Broadband Test Equipment
GENERAL PURPOSE AMPLIFIER
Product Description
The RF2306 is a general purpose, low cos... |
| Description |
GENERAL PURPOSE AMPLIFIER 通用放大
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| File Size |
58.69K /
4 Page |
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it Online |
Download Datasheet
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2367PCBA RF2367
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| OCR Text |
... .10 MAX.
4
GENERAL PURPOSE amplifiers
67XY
1.90
3.00 2.60
1.30 1.00
.90 .70
9 1 All dimensions in mm.
.25 .10 .37 ...power Down Control * Single 2.5V to 6.0V power Supply * 150MHz to 2500MHz Operation * Extremely Smal... |
| Description |
PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER
From old datasheet system
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| File Size |
92.84K /
8 Page |
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it Online |
Download Datasheet |
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2145PCBA RF2145
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| OCR Text |
...900 power AMPLIFIER
2
power amplifiers
Product Description
The RF2145 is a high power, high efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has... |
| Description |
DCS1800/1900 power AMPLIFIER 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND MEDIUM power AMPLIFIER
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| File Size |
75.65K /
6 Page |
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it Online |
Download Datasheet |
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2138PCBA RF2138
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| OCR Text |
...GSM power AMPLIFIER
2
power amplifiers
0.38 0.40 sq. 2.00 1.50 sq. 0.28 0.80 0.13
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Product Description
The RF2138 is a high power, high efficiency power amplifier module off... |
| Description |
3V GSM power AMPLIFIER 3V的的GSM功率放大
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| File Size |
144.50K /
10 Page |
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it Online |
Download Datasheet |
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2131PCBA RF2131
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| OCR Text |
...MPS/ETACS AMPLIFIER
2
power amplifiers
Product Description
The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has... |
| Description |
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM power AMPLIFIER
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| File Size |
83.72K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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