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Duracell California Eastern Laboratories, Inc.
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| Part No. |
NESG2021M05-T1-A
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| OCR Text |
...(uhs2-hv), and is designed for a wide range of applications including low noise ampli?ers, medium power ampli?ers, and oscillators. nec?s ...z s = z sopt , zl = z lopt g a associated gain at v ce = 2 v, i c = 3 ma, f = 5.2 ghz, db ... |
| Description |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
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| File Size |
572.25K /
14 Page |
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NEC Corp.
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| Part No. |
UPA827TF-T1-A
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| OCR Text |
...nt at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 h fe dc current gain 1 at ...z o = 50 0.10 0.97 -3.76 2.38 173.74 0.02 86.91 0.99 -3.32 0.20 0.96 -7.50 2.35 167.97 0.03 83... |
| Description |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
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| File Size |
149.44K /
6 Page |
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| Part No. |
TD170N06KOF-A
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| OCR Text |
a r y 1 9 9 6 m a r k e t i n g i n f o r m a t i o n t t 1 7 0 n 3 5 2 8 , 5 5 6 1 1 5 8 0 m 8 1 8 9 2 1 8 a a k k k 1 g 1 k 2 g 2 ...z ndstrom gate trigger current t vj = 25 c, v d = 6 v i gt max. 200 ma z ndspannung gate trigg... |
| Description |
350 A, 600 V, SCR
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| File Size |
206.22K /
5 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
NE3509M04-T2-A
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| OCR Text |
... lna - lna for micro- w a v e communication s y stem ordering information p a rt numb er ord e r numb er qu a n tit ...z ) m i n i m u m n o i s e f i gu r e n f m i n ( d b ) 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 ... |
| Description |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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| File Size |
322.02K /
11 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
UPC8204TK-E2-A
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| OCR Text |
... (unless otherwise specified, t a = +25 c, v cc = v out = 3.0 v, z s = z l = 50 ? , external matched output port) nec's upc8204tk is a silicon monolithic integrated circuit designed as variable gain amplifier. the package is 6-pin lea... |
| Description |
NECs VARIABLE GAIN AMPLIFIER
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| File Size |
695.58K /
4 Page |
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it Online |
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