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Fairchild Semiconductor, Corp.
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| Part No. |
FCD4N60TM
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| OCR Text |
...wn voltage v gs = 0v, i d = 3.9a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i... |
| Description |
600V N-Channel MOSFET 3.9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
810.79K /
8 Page |
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it Online |
Download Datasheet
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Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
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| Part No. |
AP09N70R-A AP09N70R-A09
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| OCR Text |
... simple drive requirement i d 9a description absolute maximum ratings symbol units v ds v v gs gate-source voltage v i d @t c =25 continu...650v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =520v , v gs =0v - - 500 ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 9 A, 650 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
93.80K /
4 Page |
View
it Online |
Download Datasheet |
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