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  64m.word Datasheet PDF File

For 64m.word Found Datasheets File :: 574    Search Time::2.984ms    
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    Samsung Electronic
Part No. KAB01D100M-TNGP KAB02D100M-TNGP KAB03D100M-TNGP KAB04D100M-TNGP KAB01D100M-TLGP KAB02D100M-TLGP KAB03D100M-TLGP KAB04D100M-TLGP
OCR Text 64m bit (8mx8/4mx16) dual bank nor flash / 128m bit (8mx16) nand flash / 32m bit (2mx16) utram revision history the attached datasheets...word) and erases in units of a block. single or multiple blocks can be erased. the block erase opera...
Description Multi-Chip Package MEMORY

File Size 1,366.74K  /  72 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00
OCR Text 64m x 16 bit nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics. samsung electr...word - block erase -x8 device(k9f1g08x0m): (128k + 4k)byte -x16 device(k9f1g16x0m)...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48

File Size 737.72K  /  40 Page

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    Mitsubishi Electric Corporation
Part No. S40B
OCR Text ...-bank x 1048576-word x 16-bit) 64m bit synchronous dram 1 description m2v64s20btp is organized as 4-bank x4,194,304-word x 4-bit,and m2v64s30btp is organized as 4-bank x 2097152-word x 8-bit , and m2v64s40btp is organized as 4-bank x 10...
Description 64M bit Synchronous DRAM

File Size 662.00K  /  52 Page

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    SHARP ELECTRONICS CORP
Part No. LH28F640BFHE-PTTL80
OCR Text 64m (4m 16) (model no.: lhf64fa2) spec no.: fm025005 issue date: may 10, 2002 p relimina r y p roduc t s pecific a tions ...word page mode configurative 4-plane dual work  flexible partitioning  read operations during b...
Description 4M X 16 FLASH 1.8V PROM, 80 ns, PDSO48

File Size 279.33K  /  36 Page

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    K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M
OCR Text 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. v...Word - Block Erase -X8 device(K9F1G08X0M): (128K + 4K)Byte -X16 device(K9F1G16X0M): (64K + 2K)Word *...
Description 64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 725.13K  /  40 Page

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    K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
OCR Text ...ocument Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Iol(R...Word - Block Erase -X8 device(K9F1G08X0M): (128K + 4K)Byte -X16 device(K9F1G16X0M): (64K + 2K)Word *...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata

File Size 712.11K  /  38 Page

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    K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M
OCR Text ...K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage ma...word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 devic...
Description FLASH MEMORY

File Size 597.88K  /  38 Page

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