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Alpha & Omega Semiconductors
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| Part No. |
AOWF11N70
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| OCR Text |
...al gate charge v gs =10v, v ds =560v, i d =11a dynamic parameters v ds =5v, i d =250 m a v ds =560v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate... |
| Description |
700V,11A N-Channel MOSFET
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| File Size |
296.92K /
5 Page |
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Ruichips Semiconductor ...
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| Part No. |
RU7H2K
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| OCR Text |
... =2a, v gen =10v, r g =25 v ds =560v, v gs =10v, i ds =2a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. limited by t jmax , i as =3a, v dd = 100v, r g = 50 ... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
248.45K /
8 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STP5NC70ZFP
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| OCR Text |
... ns q g total gate charge v dd =560v,i d = 5a, v gs =10v 27 36.4 nc q gs gate-source charge 8 nc q gd gate-drain charge 10 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d =5a, r g =4.... |
| Description |
N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
353.17K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP7NC70Z STP7NC70ZFP STB7NC70Z STB7NC70ZT4
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| OCR Text |
...8ns q g total gate charge v dd =560v,i d = 7a, v gs =10v 47 66 nc q gs gate-source charge 11 nc q gd gate-drain charge 19 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d =7a, r g =4.7... |
| Description |
N-CHANNEL 700V - 1.1 OHM - 6A TO-220/FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
517.39K /
13 Page |
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it Online |
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