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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00S003M
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| OCR Text |
...formed in typical 200 s on the 528-bytes and an erase operation can be performed in typical 2ms on a 16k- bytes block. data in the page can...outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~ i/o 7 dat... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,819.19K /
86 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| Part No. |
K9F2808U0M-YIB0 K9F2808U0M-YCB0
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| OCR Text |
... program operation programs the 528-byte page in typically 200 m s and an erase operation can be per- formed in typically 2ms on a 16k-byte ...outputs. do not leave v cc or v ss disconnected. 48-pin tsop1 standard type 12mm x 20mm 1 2 3 4 5 ... |
| Description |
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
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| File Size |
349.99K /
26 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F5608U0M-YCB0 K9F5608U0M-YIB0
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| OCR Text |
... program operation programs the 528- byte page in typically 200 m s and an erase operation can be per- formed in typically 2ms on a 16k-byte...outputs. do not leave v cc or v ss disconnected. k9f5608u0m-ycb0/yib0 1 2 3 4 5 6 7 8 9 10 11 12 1... |
| Description |
32M x 8 Bit NAND Flash Memory
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| File Size |
355.87K /
26 Page |
View
it Online |
Download Datasheet
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Price and Availability
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