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Micron Semiconductor Products
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| Part No. |
MT8VDDT3264HD MT8VDDT6464HD
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| OCR Text |
...rights reserved. 128mb, 256mb, 512mb (x64) 200-pin ddr sodimm small-outline ddr sdram module mt8vddt1664hd ? 128mb mt8vddt3264hd ? 256mb mt8vddt6464hd ? 512mb for the latest data sheet, please refer to the micron web site: www.micron... |
| Description |
(MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
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| File Size |
572.85K /
30 Page |
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| Part No. |
MT46H32M32LFCG-5A
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| OCR Text |
...part marking mt46h16m32lfcg-5:b 512mb ddr, x32, 200 mhz d9ktk mt46h16m32lfcg-5 it:b 512mb ddr, x32, 200 mhz d9ktl mt46h16m32lfcg-54:b 512mb ddr, x32, 185 mhz d9ktm mt46h16m32lfcg-54 it:b 512mb ddr, x32, 185 mhz d9ktn mt46h16m32lfcg-6:b 512m... |
| Description |
32M X 32 DDR DRAM, PBGA152
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| File Size |
260.83K /
12 Page |
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Micron Technology, Inc.
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| Part No. |
MT16LSDT6464AGI-133 MT8LSDT3264AGI-133
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| OCR Text |
...icron technology inc. 256mb / 512mb (x64) 168-pin sdram dimms synchronous dram module mt8lsdt3264a(i) - 256mb mt16lsdt6464a(i) - 512mb for the latest data sheet, please refer to the micron web site: www.micron.com/moduleds features ? p... |
| Description |
SYNCHRONOUS DRAM MODULE 同步DRAM模块
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| File Size |
590.32K /
24 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HYMP512U64CP8-S6
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| OCR Text |
...odule(d imm) series consists of 512mb c ver. ddr2 sdrams in fine ball grid array(fbga) pack ages on a 240pin glass-epoxy substr ate. this hynix 512mb c ver. based ddr2 unbuffered dimm series provide a high performance 8 byte interface in 13... |
| Description |
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240
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| File Size |
571.57K /
30 Page |
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http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
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| OCR Text |
...3qc-zc36 275mhz 550mbps/pin the 512mb gddr2 sdram chip is organized as 8mbit x 16 i/o x 4banks banks device. this synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800mb/sec/pin fo r general applications... |
| Description |
; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
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| File Size |
1,416.01K /
64 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 HYB25D512400AT-8 HYB25D512800AT-6
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... tsop66 package description the 512mb ddr sdram is a high-speed cmos, dynamic random-access memory containing 536,870,912 bits. it is internally configured as a quad-bank dram. the 512mb ddr sdram uses a double-data-rate archi- tecture to a... |
| Description |
512Mb (64Mx8) DDR266A (2-3-3)
512Mb (64Mx8) DDR200 (2-2-2)
512Mb (32Mx16) DDR200 (2-2-2)
512Mb (128Mx4) DDR200 (2-2-2)
512Mb (64Mx8) DDR333 (2.5-3-3) ？的512Mb4Mx8DDR333内存.5-3-3）？
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| File Size |
913.06K /
77 Page |
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| Part No. |
K4T51163QI-HIE70
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| OCR Text |
...terms or provisions may apply. 512mb i-die ddr2 sdram specification 84fbga with lead-free and halogen-free (rohs compliant) industrial temp. -40 to 95 c
rev. 1.0 august 2009 k4t51163qi 2 of 42 industrial ddr2 sdram revision history ... |
| Description |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
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| File Size |
801.23K /
42 Page |
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