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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23C8105D
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| OCR Text |
...n.c no connection 8m-bit (1mx8 /512kx16) cmos mask rom the km23c8105d(g) is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x ... |
| Description |
8M-Bit (1mx8 /512kx16) CMOS Mask ROM(8M1mx8 /512kx16)掩膜ROM)
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| File Size |
89.99K /
5 Page |
 View
it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23V8100D
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| OCR Text |
...n.c no connection 8m-bit (1mx8 /512kx16) cmos mask rom the km23v8100dg is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16... |
| Description |
8M-Bit (1mx8 /512kx16) CMOS Mask ROM(8M1mx8 /512kx16) CMOS掩膜ROM)
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| File Size |
81.69K /
4 Page |
View
it Online |
Download Datasheet |
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Samsung Electronics
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| Part No. |
K3N4C1000D-TC K3N4C1000D-TE
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| OCR Text |
512kx16) CMOS MASK ROM
FEATURES
* Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) * Fast access time : 100ns(Max.) * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50A(Max.) * ... |
| Description |
8M-Bit CMOS Mask ROM
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| File Size |
59.14K /
3 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
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| Part No. |
HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F800ATG-55I HY29F800ATR-55I HY29F800ATT-55I HY29F800ABG-55 HY29F800ABG-55I HY29F800ABG-70I HY29F800ATT-90I HY29F800ABT-90 HY29F800ABG-90 HY29F800ABR-90I HY29F800ABR-12I HY29F800ABR-55 HY29F800ATG-12I HY29F800ABG-12I HYNIXSEMICONDUCTORINC-HY29F800ATR-55I
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| OCR Text |
...agram hy29f800a 8 megabit (1mx8/512kx16), 5 volt-only, flash memory
2 rev. 1.1/feb 02 hy29f800a version operating over 5.0 volts 5% is also avail- able. to eliminate bus contention, the hy29f800a has separate chip enable (ce#), write e... |
| Description |
8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory 8兆位1mx8/512kx16），5伏只，闪
8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512kx16），5伏只，闪
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| File Size |
275.69K /
40 Page |
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it Online |
Download Datasheet |
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Samsung Electronics
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| Part No. |
K3N4C1000D-DC K3N4C1000D-GC
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| OCR Text |
512kx16) CMOS MASK ROM
FEATURES
* Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) * Fast access time : 100ns(Max.) * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50A(Max.) * F... |
| Description |
8M-Bit CMOS Mask ROM
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| File Size |
60.98K /
3 Page |
View
it Online |
Download Datasheet |
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