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  500-037 Datasheet PDF File

For 500-037 Found Datasheets File :: 6107    Search Time::1.078ms    
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    P6KE200A P6KE47A P6KE51A P6KE30A P6KE56A P6KE33A P6KE75A P6KE8.2A P6KE22A P6KE120A P6KE12A P6KE110A P6KE11A P6KE100A P6K

Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. P6KE200A P6KE47A P6KE51A P6KE30A P6KE56A P6KE33A P6KE75A P6KE8.2A P6KE22A P6KE120A P6KE12A P6KE110A P6KE11A P6KE100A P6KE10A P6KE150A P6KE15A P6KE130A P6KE13A P6KE43A P6KE62A P6KE91A P6KE68A P6KE6.8A P6KE180A P6KE160A P6KE170A P6KE39A P6KE36A P6KE16A ON2770 P6KE7.5A P6KE18A P6KE20A P6KE24A P6KE27A P6KE82A P6KE9.1A P6KE68-200-D
OCR Text ...erse Leakage @ VRWM IR (A) 1000 500 200 50 10 5 5 5 Maximum Reverse Surge Current IRSM{ (Amps) 57 53 50 45 41 38 36 33 Maximum Reverse Volta...037 0.043 -- 0.050 1.000 1.250 MILLIMETERS MIN MAX 8.38 8.89 3.30 3.68 0.94 1.09 -- 1.27 25.40 31.75...
Description ZENER OVERVOLTAGE TRANSIENTSUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Octal Buffers and Line Drivers with 3-State Outputs 20-SOIC -40 to 85
Octal D-Type Registers with 3-State Outputs 20-SOIC -40 to 85
3-V to 5.5-V Multichannel RS-232 1-MBit/s Line Driver/Receiver 28-SOIC -40 to 85
Single Output LDO, 200mA, Fixed(1.8V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
Octal Line Driver/MOS Driver with 3-State Outputs 20-SSOP/QSOP -40 to 85
Single Output LDO, 1.0A, Fixed(2.8V), Low Noise, High PSRR 6-SOT-223 -40 to 125
1.5 GHz to 2.5 GHz Quadrature Modulator 16-VQFN -40 to 85
Low-Noise Fast-Transient-Response 1.5-A LDO Regulator 5-DDPAK/TO-263 -40 to 125
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
From old datasheet system
Zener Transient Voltage Suppressors Undirectional and Bidirectional

File Size 81.70K  /  7 Page

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    TLP200G TLP200G-1 TLP200M TLP270G TLP270G-1 TLP270M TLP140G TLP140G-1 TLP140M TLPXXM TLPXXG TLPXXG-1 -TLP140G

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. TLP200G TLP200G-1 TLP200M TLP270G TLP270G-1 TLP270M TLP140G TLP140G-1 TLP140M TLPXXM TLPXXG TLPXXG-1 -TLP140G
OCR Text ... 100 100 100 100 100 200 100 25 500 100 500 100 Necessary Resistor () - TYPICAL APPLICATION Primary protection module TLPxxM/G/G-1 An...037 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 8 Min. Typ. Max. Min. Typ. Max. ...
Description    TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE
Computers, Hardware Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE 三极的电信线过电压保

File Size 155.88K  /  14 Page

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    TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-700B TS1220-700B-TR TS1220-700H TS1220-700H-TR TYN100012 TYN100012T TYN

ST Microelectronics
STMicroelectronics
Part No. TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-700B TS1220-700B-TR TS1220-700H TS1220-700H-TR TYN100012 TYN100012T TYN60012 TYN60012T TYN612 TYN612T TYN80012 TYN80012T TN12 TN1215-1000B-TR TN1215-1000G-TR TN1215-1000H-TR TN1215-600B-TR TN1215-600G-TR TN1215-600H-TR TN1215-800B-TR TN1215-800G-TR TN1215-800H-TR TN1220-600B-TR TN1220-600H-TR TN1220-700B-TR TN1220-700H-TR
OCR Text ...Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 24 A Gate open Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj =...037 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 8 0 8 D L L3 A1 B2 B G A2 2.0 MIN...
Description SENSITIVE & STANDARD(12A SCRs)

File Size 112.25K  /  10 Page

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    2N7002LT1 ON0106

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. 2N7002LT1 ON0106
OCR Text ... -- -- -- -- -- -- -- -- -- 1.0 500 100 -100 Vdc Adc nAdc nAdc The Power Dissipation of the package may result in a lower continuous drai...037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATIO...
Description CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system

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    2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1

ONSEMI[ON Semiconductor]
http://
Part No. 2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1
OCR Text ....com RDS(on) MAX 7.5 W @ 10 V, 500 mA N-Channel 3 ID MAX 115 mA VGS VGSM 20 40 Vdc Vpk 1 Maximum ratings are those valu...037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 *For additional information on our Pb-Free strate...
Description Small Signal MOSFET 115 mA, 60 Volts
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
Small Signal MOSFET 60 V 115 mA N−Channel SOT−23

File Size 58.74K  /  4 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...DR (A) Capacitance C (pF) 500 Dynamic Input Characteristics Switching Characteristics V DS (V) -20 Drain to Source Voltage I D = -30 A -4 Switching Time t (ns) V DD = -10 V -25 V -50 V V DS V GS (V) ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ...DR (A) Capacitance C (pF) 500 Dynamic Input Characteristics Switching Characteristics V DS (V) -20 Drain to Source Voltage I D = -30 A -4 Switching Time t (ns) V DD = -10 V -25 V -50 V V DS V GS (V) ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ544

HITACHI[Hitachi Semiconductor]
Part No. 2SJ544
OCR Text ...DR (A) Capacitance C (pF) 500 Dynamic Input Characteristics Switching Characteristics V DS (V) -20 Drain to Source Voltage I D = -30 A -4 Switching Time t (ns) V DD = -10 V -25 V -50 V V DS V GS (V) ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.22K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ...DR (A) Capacitance C (pF) 500 Dynamic Input Characteristics Switching Characteristics V DS (V) -20 Drain to Source Voltage I D = -30 A -4 Switching Time t (ns) V DD = -10 V -25 V -50 V V DS V GS (V) ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...verse Recovery Time trr (ns) 500 200 100 50 Capacitance C (pF) Ciss Coss 300 100 30 10 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Reverse D...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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