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  5.8w channel Datasheet PDF File

For 5.8w channel Found Datasheets File :: 696    Search Time::3.5ms    
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    IRF7413A IRF7413ATR

International Rectifier
Part No. IRF7413A IRF7413ATR
OCR Text ... VDSS = 30V 3 6 4 5 RDS(on) = 0.0135 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advance...8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ...
Description Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm)
Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
30V Single N-channel HEXFET Power MOSFET in a SO-8 package

File Size 112.28K  /  9 Page

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    IRF7416 IRFB7416 IRF7416TR

International Rectifier
Part No. IRF7416 IRFB7416 IRF7416TR
OCR Text ... VDSS = -30V 3 6 4 5 RDS(on) = 0.02 T op V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced...8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-channel HEXFET Power MOSFET in a SO-8 package

File Size 112.47K  /  9 Page

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    MAX1848 MAX1848EKA MAX1848ETA

MAXIM[Maxim Integrated Products]
Part No. MAX1848 MAX1848EKA MAX1848ETA
OCR Text ...e External Components o 2.6V to 5.5V Input Range o 13V Maximum Output with Overvoltage Protection o Optimized for Low Input Ripple o Programmable Soft-Start o 0.3A Shutdown Current o Small 8-pin Thin QFN (3mm 3mm) and 8-Pin SOT23 Packages ...
Description White LED Step-Up Converter in SOT23

File Size 320.36K  /  9 Page

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    IRL5602S IRF530S IRL5602STRR IRL5602STRL

IRF[International Rectifier]
Part No. IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text ...conds Max. -24 -17 -96 75 0.5 8.0 290 -12 7.5 -0.81 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal R...8W, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 1460 --- VGS = 0V 790 --- pF VDS ...
Description -20V Single P-channel HEXFET Power MOSFET in a D2-Pak package

File Size 169.26K  /  8 Page

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    MRF141

MOTOROLA[Motorola, Inc]
Part No. MRF141
OCR Text ... IDSS IGSS 65 -- -- -- -- -- -- 5.0 1.0 Vdc mAdc Adc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Sourc...8W f = 175 MHz IDQ = 250 mA 240 200 Pin = 4 W 2W 1W 160 120 80 40 0 12 SUPPLY VOLTAGE (...
Description N-channel BROADBAND RF POWER MOSFET

File Size 159.11K  /  8 Page

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    MRF174

MOTOROLA[Motorola, Inc]
Part No. MRF174
OCR Text ...0 A) VGS(th) gfs 1.0 1.75 3.0 2.5 6.0 -- Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Ca...8W Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage ...
Description N-channel MOS BROADBAND RF POWER FET

File Size 166.51K  /  10 Page

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    MRF175GU1111 MRF175GV

MACOM[Tyco Electronics]
Part No. MRF175GU1111 MRF175GV
OCR Text ... 125 -- -- -- -- -- -- 2.5 1.0 Vdc mAdc Adc 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Cha...8W 4W Figure 12. Output Power versus Supply Voltage REV 9 6 AAAAA A AAAAAAAAAAAAAAAAAAAA...
Description N-channel MOS BROADBAND RF POWER FETs

File Size 205.41K  /  10 Page

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    MRF175GU MRF175GV

MOTOROLA[Motorola, Inc]
Part No. MRF175GU MRF175GV
OCR Text ...DSS IGSS 65 -- -- -- -- -- -- 2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from electros...8W 4W IDQ = 2 x 100 mA f = 225 MHz Pin = 12 W 200 100 VDD = 28 V IDQ = 2 x 100 mA f = 225 MHz ...
Description N-channel MOS BROADBAND RF POWER FETs

File Size 183.29K  /  8 Page

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    MRF175GV MRF175GU

MACOM[Tyco Electronics]
Part No. MRF175GV MRF175GU
OCR Text ...DSS IGSS 65 -- -- -- -- -- -- 2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from electros...8W 4W IDQ = 2 x 100 mA f = 225 MHz Pin = 12 W 200 100 VDD = 28 V IDQ = 2 x 100 mA f = 225 MHz ...
Description From old datasheet system
N-channel MOS BROADBAND RF POWER FETs

File Size 210.44K  /  11 Page

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