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  5.6-200 Datasheet PDF File

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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...0.2 -- -- -0.64 Max -- -- -- -0.5 -0.6 320 -- -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 I C = -150 mA, IB = -15 mA VCE = -3 V, IC = -10 mA VCE = -3 V, IC = -500 mA (P...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

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    2SA1123 2SC2631

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PANASONIC[Panasonic Semiconductor]
Part No. 2SA1123 2SC2631
OCR Text ...ation Complementary to 2SC2631 5.00.2 Unit: mm 4.00.2 q q q 13.50.5 q Satisfactory foward current transfer ratio hFE col...6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 IB=-500A -450A -400A -350A -300A -250A -200...
Description Silicon PNP epitaxial planer type

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    2SA1124

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1124
OCR Text ...ation Complementary to 2SC2632 5.90.2 Unit: mm 4.90.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage ...6 IB=-500A -450A -400A -350A -300A -250A -200A -150A -100A Collector current IC (mA) -25C ...
Description Silicon PNP epitaxial planer type

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    2SA1127

Panasonic Semiconductor
Part No. 2SA1127
OCR Text ...ation Complementary to 2SC2634 5.00.2 Unit: mm 4.00.2 q q Low noise characteristics. High foward current transfer ratio hFE. s...6 -1 200 150 VCE(sat) VBE fT NV V V MHz mV *h FE Rank classification R 180 ~ 360 S 2...
Description Silicon PNP epitaxial planer type

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text 5.00.2 4.00.2 q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. ...6 IB=-10A 2SA1128 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 ...
Description Silicon PNP epitaxial planer type

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2SA1171
OCR Text ... IC PC Tj Tstg Ratings -90 -90 -5 -50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Symbol Min -90 -- 1 Typ -- -- -- -- -- 200 1.6 Max -- -0.5 800 -0.75 -0.5 -- -- Unit V A Test conditi...
Description Silicon PNP Epitaxial

File Size 23.17K  /  5 Page

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ... IE PC Tj Tstg 2SA1188 -90 -90 -5 -100 100 400 150 -55 to +150 2SA1189 -120 -120 -5 -100 100 400 150 -55 to +150 Unit V V V mA mA mW C C ...6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 and 2SA1189 are grouped by...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ... IE PC Tj Tstg 2SA1190 -90 -90 -5 -100 100 400 150 -55 to +150 2SA1191 -120 -120 -5 -100 100 400 150 -55 to +150 Unit V V V mA mA mW C C ...6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE ...
Description Silicon PNP Epitaxial

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...C Tj Tstg Ratings -60 -60 -7 -0.5 -1.0 0.9 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) Item Symbol Min -6...6 -0.3 -0.1 -0.03 -0.01 -0.003 -3 iC (peak) IC max Area of Safe Operation PW t ho 1s t sho ot ms ms...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ... 50 3 Unit: mm 8.0 0.5 0 12 3.1 +0.15 -0.1 3.7 0.7 11.0 0.5 2.7 0.4 12 0 2.3 0.3 120 1.1 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod -- ...
Description Silicon PNP Epitaxial

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