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400 600 800v Datasheet PDF File

For 400 600 800v Found Datasheets File :: 1703 Search Time::1.937ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BUZ80A 2955
OCR Text	... test circuit, figure 5) V DD = 400 V ID = 5 A V GS = 10 V Min. T yp. 65 150 80 Max. 90 200 110 Unit ns ns A/s Qg Q gs Q gd Total Gate...600 V ID = 3.8 A R G = 50 V GS = 10 V (see test circuit, figure 5) Min. T yp. 110 140 150 Max. 145 ...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL 800v - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR N - CHANNEL 800v - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR From old datasheet system
File Size	99.41K / 9 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM100DY-28H
OCR Text	...- - - - - - 1.0 Max. 20 7 4 250 400 300 500 300 3.8 - Units nF nF nF ns ns ns ns ns V Diode Reverse Recovery Time Emitter-Collector Volta...600 800 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 156...
Description	Dual IGBTMOD 100 Amperes/1400 Volts
File Size	67.61K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM150DY-28H
OCR Text	... - - - - 1.5 Max. 30 10.5 6 250 400 300 500 300 3.8 - Units nF nF nF ns ns ns ns ns V Diode Reverse Recovery Time Emitter-Collector Volta...600 800 1000 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvani...
Description	Dual IGBTMOD 150 Amperes/1400 Volts
File Size	69.57K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM300DY-28H
OCR Text	...(sat), (VOLTS) VCE = 10V 500 400 300 200 100 0 500 400 300 200 100 VGE = 20 (V) 12 4 VGE = 15V Tj = 25C Tj = 125C 3 11 ...600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTE...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.35K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Powerex Power Semiconductors Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	CM75DY-28H
OCR Text	...AMPERES) 10-1 102 0 0 200 400 600 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)...
Description	HIGH POWER SWITCHING USE INSULATED TYPE IGBT Modules:1400V
File Size	47.54K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP10NK80Z STP10NK80ZFP STW10NK80Z
OCR Text	...g Qgs Qgd Test Conditions VDD = 400 V, ID = 4.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640V, ID = 9 A, VGS = 10V Min. Ty...600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044...
Description	N-CHANNEL 800v - 0.78 OHM - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 800v - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL Power MOSFET N-CHANNEL 800v - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 800v - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?Power MOSFET
File Size	457.08K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB80 STP5NB80FP 6418
OCR Text	... Charge Test Con ditions V DD = 400 V ID = 3 A VGS = 10 V R G = 4.7 (see test circuit, figure 3) V DD = 480 V I D = 5.6 A V GS = 10 V Min. ...600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.01...
Description	From old datasheet system N - CHANNEL 800v - 1.8W - 5A - TO-220/TO-220FP PowerMESH] MOSFET N - CHANNEL 800v - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
File Size	106.52K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP5NK80 STP5NK80Z STP5NK80ZFP
OCR Text	...g Qgs Qgd Test Conditions VDD = 400 V, ID = 2 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640V, ID = 4.3 A, VGS = 10V Min. Ty...600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044...
Description	N-CHANNEL 800v - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET N沟道800v 1.9ohm - 4.3A TO-220/TO-220FP齐保护的SuperMESH⑩功率MOSFET N-CHANNEL 800v - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH?Power MOSFET N-CHANNEL 800v - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESHPower MOSFET N-CHANNEL 800v 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
File Size	377.12K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM55CZ-H TM55CZ-M TM55DZ-H TM55DZ-M
OCR Text	...e peak reverse voltage ........ 400/800v VDRM Repetitive peak off-state voltage ........ 400/800v DOUBLE ARMS Insulated Type UL Recognized Y...600 400 0.8 1.2 1.6 2.0 2.4 200 1 23 5 7 10 20 30 50 70100 ON...
Description	MEDIUM POWER GENERAL USE INSULATED TYPE
File Size	62.07K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM55EZ-H TM55EZ-M TM55RZ-H TM55RZ-M
OCR Text	...e peak reverse voltage ........ 400/800v VDRM Repetitive peak off-state voltage ........ 400/800v MIX DOUBLE ARMS Insulated Type UL Recogniz...600 400 0.8 1.2 1.6 2.0 2.4 200 1 23 5 7 10 20 30 50 70100 FO...
Description	MEDIUM POWER GENERAL USE INSULATED TYPE
File Size	66.14K / 5 Page	View it Online	Download Datasheet

For 400 600 800v Found Datasheets File :: 1703 Search Time::1.937ms
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