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Cystech Electonics Corp...
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| Part No. |
MTB09P04DJ3-0-T3-G
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| OCR Text |
... 5.2m (typ) r ds(on) @v gs =-4.5v, i d =-15a 6.9m (typ) g d s environment friendly grade : s for rohs compliant products, g ...0 *3 w single pulse avalanche energy e as 625 *2 mj single pulse avalanche cur... |
| Description |
P-Channel Enhancement Mode Power MOSFET
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| File Size |
343.52K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB08N04J3-0-T3-G
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| OCR Text |
... device is mounted on 1 in 2 fr-4 board with 2 oz. copper. *3. when the device is on the minimum pad size recommended. characte...0.03 - v/ c reference to 25c, i d =250 a v gs(th) 1.5 2.1 2.5 v v ds =v gs , i d =250 a ... |
| Description |
N -Channel Enhancement Mode Power MOSFET
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| File Size |
312.86K /
9 Page |
View
it Online |
Download Datasheet
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Cystech Electonics Corp...
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| Part No. |
MTA340N02KC3-0-T1-G
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| OCR Text |
... d bv dss 20v i d @v gs =4.5v 700ma r dson @v gs =4.5v, i d =650ma 299m (typ) r dson @v gs =2.5v,i d =500ma 550m (typ) ...0 v gate - source voltage v gs 12 continuous drain current @ t a... |
| Description |
20V N-Channel Enhancement Mode MOSFET
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| File Size |
523.04K /
8 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB20N04J3-0-T3-G
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| OCR Text |
..., i d =10a r dson(typ) v gs =4.5v, i d =8a 20.8m g d s environment friendly grade : s for rohs compliant products, g for roh...0.74 1 v i f =1.3a, v gs =0v trr - 10.1 - ns qrr - 6.5 - nc i f =5a, di f /dt=100a/ ... |
| Description |
N -Channel Enhancement Mode Power MOSFET
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| File Size |
342.62K /
9 Page |
View
it Online |
Download Datasheet
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