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IRF[International Rectifier]
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| Part No. |
CPV362M4K
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| OCR Text |
... 90C, TJ = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These... |
| Description |
600V UltraFast 8-25 kHz 3-Phase Bridge IGBT in a IMS-2 package Short Circuit Rated UltraFast IGBT
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| File Size |
312.21K /
10 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV363MF CPV363
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| OCR Text |
... 90C, TJ = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These ... |
| Description |
IGBT SIP MODULE Fast IGBT
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| File Size |
413.70K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV363MK
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| OCR Text |
...90C, T J = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. The... |
| Description |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
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| File Size |
409.03K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV363MM
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| OCR Text |
...90C, T J = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. The... |
| Description |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
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| File Size |
408.15K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV363MU
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| OCR Text |
...90C, T J = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These ... |
| Description |
IGBT SIP MODULE Ultra-Fast IGBT
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| File Size |
412.33K /
8 Page |
View
it Online |
Download Datasheet
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International Rectifier, Corp. IRF[International Rectifier]
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| Part No. |
CPV364MF
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| OCR Text |
... 90C, TJ = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These ... |
| Description |
IGBT SIP MODULE Fast IGBT IGBT的高级督察模块快速IGBT
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| File Size |
418.04K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV364MK
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| OCR Text |
...90C, T J = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. The... |
| Description |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
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| File Size |
403.85K /
8 Page |
View
it Online |
Download Datasheet
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International Rectifier, Corp. IRF[International Rectifier]
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| Part No. |
CPV364MM
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| OCR Text |
...90C, T J = 125C, Supply Voltage 360vdc, Power Factor 0.8, Modulation Depth 80% 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are ... |
| Description |
Short Circuit Rated Fast IGBT 短路额定快速IGBT 600V 3-Phase Bridge IGBT in a IMS-2 package
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| File Size |
79.36K /
2 Page |
View
it Online |
Download Datasheet
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