| |
|
 |
DYNEX[Dynex Semiconductor]
|
| Part No. |
DG648BH45
|
| OCR Text |
...x. 3.2 100 50 1.0 3.0 50 3170 1.35 3.2 10000 20.0 2.0 22.0 6000 12000 690 Units V mA mA V A mA mJ s s mJ s s s C C A
3/19
DG648BH45
C...2000A, CS = 2.0F, RS = 10 Ohms dI/dt = 300A/s, dIFG/dt = 30A/s
3000 VD = 3000V
2000 VD = 2000V... |
| Description |
Gate Turn-off Thyristor
|
| File Size |
219.92K /
19 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
|
| Part No. |
BSM75GB120DLC
|
| OCR Text |
...s tf 0,05 0,07 s s td,off 0,3 0,35 s s tr 0,05 0,05 s s td,on 0,05 0,06 s s
min.
typ.
max.
RCC`+EE`
-
1,0
-
m
Cha...2000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladu... |
| Description |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
| File Size |
75.98K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
CM100HA-28H
|
| OCR Text |
...ches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4
1.73+0.04/-0.02 ...2000A/s IE = 1000A, diE/dt = -2000A/s VCC = 800V, IC = 1000A, VGE1 = VGE2 = 15V, RG = 3.3 VGE = 0V, ... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
| File Size |
85.69K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
WESTCODE SEMICONDUCTORS LTD
|
| Part No. |
N0606YS220
|
| OCR Text |
...mum peak on-state voltage - - 2.35 i tm =1550a v v tm maximum peak on-state voltage - - 2.55 i tm =1800a v v t0 threshold voltage - - 1.103 ...2000a 100 1000 10000 1 10 100 1000 commutation rate - di/dt (a/s) recovered charge - q ra (c) t j ... |
| Description |
1199 A, 2200 V, SCR
|
| File Size |
306.33K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
