3.900v pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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3.900v Datasheet PDF File

For 3.900v Found Datasheets File :: 1835 Search Time::0.75ms
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				Powerbox
Part No.	Q40N-5 Q101N-5 Q02-12 Q02-24 Q02-5 Q80-50 Q20-5 Q06-12 Q06-24 Q06-5 Q10-5 Q10-12 Q10-24 Q12-5 Q01-12 Q50-5 Q40-5 Q09-5 Q09-12 Q09-24 Q30-5 Q15-5 Q07-12 Q07-24 Q04-12 Q04-24 Q04-5 Q08-12 Q08-5 Q05-12 Q05-24 Q05-5 Q03-5 Q03-24 Q03-12 Q60-5
OCR Text	...ion Tables CASE A & B PIN# 1 2 3 4 FUNCTION Input Input Output Output QXX (-) (+) (+) (-) QXXN (-) (+) (-) (+) CASE C WIRE W1 W2 W3 W4 C...900V 0.555 mA <0.30% <50mA Q09-12 0 to 12V 0 to +/-900V 0.555 mA <0.25% <20mA Q09-24 0 to 24V 0 to +...
Description	0.5 WATTS - 100 - 10KV SINGLE OUTPUT DC/DC INDUSTRIAL
File Size	1,087.09K / 3 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM400DDM17-A00009
OCR Text	35 DIM400DDM17-A000 Replaces DS5549-4.1 June 2002 11.5 0.2 Dual Switch IGBT Module DS5549-5 June 2009 (LN26749) FEATURES 0...900V dIF/dt = 3000A/s IC = 400A VGE = 15V VCE = 900V RG(ON) = 4.7 RG(OFF) = 4.7 LS ~ 100nH 120 250 2...
Description	Dual Switch IGBT Module
File Size	275.21K / 8 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT64GA90LD30
OCR Text	...0V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emi...900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +25C Inductive Switching...
Description	High Speed PT IGBT
File Size	226.62K / 9 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT80GA90B APT80GA90S
OCR Text	... i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 1000 i...
Description	IGBT w/o anti-parallel diode
File Size	185.54K / 6 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text	... 2.5 < 2.5 ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1 EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED DPAK TO-220 3 1 2 TO-2...
Description	N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
File Size	514.47K / 13 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT64GA90B APT64GA90S
OCR Text	... i c = 38a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 10...
Description	IGBT w/o anti-parallel diode
File Size	183.21K / 6 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT46GA90JD40
OCR Text	... i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i...
Description	IGBT w/ anti-parallel diode
File Size	215.33K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT64GA90B APT64GA90S
OCR Text	...0V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emi...900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +25C Inductive Switching...
Description	High Speed PT IGBT
File Size	196.62K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation Microsemi, Corp.
Part No.	APT36N90BC3G
OCR Text	...ain-Source On-State Resistance 3 MIN 900 TYP MAX UNIT Volts (VGS = 10V, ID = 18A) 2.5 0.10 50 3 0.12 100 100 3.5 Oh...900V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150C) Gate-Source Leakag...
Description	Super Junction MOSFET Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
File Size	133.82K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGT400U170D4G
OCR Text	...al High level of integration 3 5 2 Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated packag...900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 400A RG = 3.6 Inductive Switching (125C) V...
Description	Single switch Trench Field Stop IGBT Power Module
File Size	196.04K / 5 Page	View it Online	Download Datasheet

For 3.900v Found Datasheets File :: 1835 Search Time::0.75ms
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