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25w channel Datasheet PDF File

For 25w channel Found Datasheets File :: 885 Search Time::1.094ms
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				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...rting T = +25C, L = 2.58mH, R = 25w, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...rting T = +25C, L = 1.86mH, R = 25w, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...rting T = +25C, L = 2.26mH, R = 25w, Peak I = 47A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	47 A, 500 V, 0.1 ohm, N-channel, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	...rting T = +25C, L = 2.34mH, R = 25w, Peak I = 37A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	...rting T = +25C, L = 2.12mH, R = 25w, Peak I = 35A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C 1 Repetitive Rating: Pulse width limited b...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014 APT5014BLL APT5014SLL
OCR Text	...arting T = +25C, L =2.12mH, R = 25w, Peak I = 35A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS
File Size	51.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5015BLC
OCR Text	...rting T = +25C, L = 2.54mH, R = 25w, Peak I = 32A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	POWER MOS VI 500V 32A 0.150 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	28.40K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text	...arting T = +25C, L =2.89mH, R = 25w, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS
File Size	51.47K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5016 APT5016BFLL APT5016SFLL
OCR Text	...arting T = +25C, L =2.89mH, R = 25w, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	53.90K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text	...rting T = +25C, L = 2.89mH, R = 25w, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs.
File Size	34.77K / 2 Page	View it Online	Download Datasheet

For 25w channel Found Datasheets File :: 885 Search Time::1.094ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |