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  240 110 Datasheet PDF File

For 240 110 Found Datasheets File :: 19656    Search Time::2.984ms    
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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...TEST CIRCUIT SEE FIGURE 13 180 240 300 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance V...110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...TEST CIRCUIT SEE FIGURE 13 180 240 300 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...EST CIRCUIT SEE FIGURE 13 180 240 300 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...ut Characteristics 1000.0 240 Gfs, Forward Transconductance (S) TJ = 25C 200 160 120 80 40 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) TJ = 175C ID, Drain-to-Source Current () 100.0 TJ = 175C 10.0 1.0 ...
Description AUTOMOTIVE MOSFET

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...s 100 0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 OPERAT...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048) 4 15.24 (.60 0) 14.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.55...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ....54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4....
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text .... -11 -7.7 -44 3.7 60 0.40 20 240 -11 6.0 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resista...110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

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    M74HC356B1R M74HC356 M74HC356C1R M74HC356M1R M54HC356 M54HC356F1R

STMICROELECTRONICS[STMicroelectronics]
Part No. M74HC356B1R M74HC356 M74HC356C1R M74HC356M1R M54HC356 M54HC356F1R
OCR Text ...9 28 22 117 33 26 Max. 60 12 10 240 48 41 280 56 48 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. 75 15 13 300 60 51 350 70 60 Min. M...110 22 19 110 22 19 75 15 13 75 15 13 5 5 5 10 Min. Max. 390 78 66 450 90 77 405 81 69 465 93 79 190...
Description 8 CHANNEL MULTIPLEXER/REGISTER WITH LATCHES (3-STATE)
WITH LATCHES 3-STATE 8 CHANNEL MULTIPLEXER/REGISTER

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    MAX1062 MAX1062ACUB MAX1062AEUB MAX1062BCUB MAX1062BEUB MAX1062CCUB MAX1062CEUB

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX1062 MAX1062ACUB MAX1062AEUB MAX1062BCUB MAX1062BEUB MAX1062CCUB MAX1062CEUB
OCR Text ....1 tCONV fSCLK 5 0.1 15 <50 200 240 4.8 s MHz ns ps ksps s SINAD SNR THD SFDR -3dB point SINAD > 81dB 87 81 82 84 84 -99 101 4 20 -86 dB dB ...110 fSAMPLE = 200kHz MAX1062 toc06 100 90 80 70 SINAD (dB) 110 100 90 80 SFDR (dB) 70 60 50 4...
Description 14-Bit, 5V, 200ksps ADC with 10µA Shutdown
14-Bit / %V / 200ksps ADC with 10A Shutdown
14-Bit, %V, 200ksps ADC with 10レA Shutdown
"14-Bit, 5V, 200ksps ADC with 10?A Shutdown"
14-Bit, %V, 200ksps ADC with 10A Shutdown
14-Bit, %V, 200ksps ADC with 10μA Shutdown

File Size 374.08K  /  17 Page

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For 240 110 Found Datasheets File :: 19656    Search Time::2.984ms    
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