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225125 1P47ANR 01208 STLS2F01 NMR107 51256SL 1N3026 01580
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  21.0-24.0 Datasheet PDF File

For 21.0-24.0 Found Datasheets File :: 9362    Search Time::1.359ms    
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    ONSEMI[ON Semiconductor]
Part No. 2N3819 2N3819-D
OCR Text ...S 25 0.5 - - - - - - - 7.5 -8.0 210 Vdc Vdc Vdc nAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 2.0...240 70 80 90 100 110 120 340 330 320 40 30 20 10 0 0.4 350 340 330 32 ID = 0.25 IDSS 200 300 400 500...
Description JFET VHF/UHF Amplifier N-Channel - Depletion
JEET VHF/UHF Amplifier N-channel-Depletion

File Size 172.35K  /  8 Page

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    2N5555

ON Semiconductor
Part No. 2N5555
OCR Text ... 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 6. S11s 30 40 20 10 0 350 340 330 320 40 30 ...240 0.4 0.7 0.3 0.6 0.3 260 250 240 0.4 0.5 130 0.6 230 130 230 ...
Description JFET Switching

File Size 178.29K  /  9 Page

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    AP2085

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. AP2085
OCR Text ...m dB Gp 17.5 Ic_total Icq 210 180 2:1 2.5:1 18 210 180 2:1 2.5:1 -40 -40 0.5 dBm mA mA Pout=18dBm Pout=18dBm Pout=18dBm -4...240 230 280 270 260 Fig. 6 I TOTAL vs. Frequency at 5.0V Total Current (mA) 220 210 200 19...
Description 5 GHz Power Amplifier

File Size 345.21K  /  9 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M11JFLL
OCR Text ... td(on) 30 120 150 180 210 240 270 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 60 90 120 150 180 210 240 270 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000 V I DD 30 60 90 8000 = 130V R = 5 ...
Description POWER MOS 7 FREDFET

File Size 166.23K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M11JLL
OCR Text ... td(on) 30 120 150 180 210 240 270 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 60 90 120 150 180 210 240 270 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000 V I DD 30 60 90 8000 = 130V R = 5 ...
Description POWER MOS 7 MOSFET

File Size 165.20K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM120UM70D-ALN
OCR Text ... 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Current VDS=800V RG=0.8 T J=125C L=100H Rise and Fall times vs Current 100 t d(off) 80 VDS=800V RG=0.8 T J=125C L=100H tf tr and tf (ns) 60 ...
Description Single switch with Series diodes MOSFET Power Module

File Size 296.14K  /  6 Page

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    Amphenol, Corp.
ADPOW[Advanced Power Technology]
Part No. APTM120UM70F-ALN
OCR Text ... 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Current 24 36 V DS =800V RG =0.8 T J=125C L=100H VDS=800V RG=0.8 T J=125C L=100H Rise and Fall times vs Current 100 t d(off) 80 VDS=800V RG=0.8 T J=1...
Description 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET MODULE-5
Single switch MOSFET Power Module

File Size 296.23K  /  6 Page

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    Laird
Part No. MI0603L301R-10 LI0402E190R-10 MI1206L391R-10 HF1206J150R-10 LI0603B201R-10
OCR Text ...-10 low current 1608 70 200 340 210 362 420 0.400 200 li0603d301r-10 low current 1608 144 300 286 165 389 261 0.350 400 ferrite emi chip bea...240 280 0.050 2,000 mi0603l301r-10 mid current 1608 50 300 225 120 410 200 0.100 2,000 mi0603m121r-1...
Description Ferrite EMI Chip Beads

File Size 500.07K  /  4 Page

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    MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
Part No. APTM120UM70FAG
OCR Text ... 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Current 24 36 V DS =800V RG =0.8 T J=125C L=100H VDS=800V RG=0.8 T J=125C L=100H Rise and Fall times vs Current 100 t d(off) 80 VDS=800V RG=0.8 T J=1...
Description Single switch MOSFET Power Module

File Size 272.19K  /  6 Page

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