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200v s Datasheet PDF File

For 200v s Found Datasheets File :: 17017 Search Time::2.094ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	Fs7KM-18A Fs7KM-18
OCR Text	...age Thermal resistance VDD = 200v, ID = 3A, VGs = 10V, RGEN = RGs = 50 Is = 3A, VGs = 0V Channel to case PERFORMANCE CURVEs POWER DIs...s) TC = 25C 75C 125C DRAIN CURRENT ID (A) 16 3 2 100 7 5 3 2 12 8 4 0 0 ...
Description	HIGH-sPEED sWITCHING UsE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	Fs7KM-18 Fs7M0680TU Fs7M0680YDTU Fs7KM-18A
OCR Text	...age Thermal resistance VDD = 200v, ID = 3A, VGs = 10V, RGEN = RGs = 50 Is = 3A, VGs = 0V Channel to case PERFORMANCE CURVEs POWER DIs...s) TC = 25C 75C 125C DRAIN CURRENT ID (A) 16 3 2 100 7 5 3 2 12 8 4 0 0 ...
Description	Fairchild Power switch(FPs) Nch POWER MOsFET HIGH-sPEED sWITCHING UsE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	Fs7KM-5
OCR Text	...V 100V 16 TC = 125C 12 200v 8 8 4 4 0 0 4 8 12 16 20 0 0 0.8 1.6 2.4 3.2 4.0 ...s) Feb.1999 CHANNEL TEMPERATURE Tch (C) ...
Description	HIGH-sPEED sWITCHING UsE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...6 VDs = 50V 12 VDs = 125V VDs = 200v 8 4 0 0 10 20 30 40 50 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO sOURCE VOLTAGE vs GATE CHARGE 5-6 IRF234, IRF235, IRF236, IRF237 Test Circuits and Waveforms VDs BVDss L VARY ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOsFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOsFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, si, POWER, MOsFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240sMD
OCR Text	...s ID(cont) RDs(on) FEATUREs 200v 13.9A W 0.180W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6...s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs Qgd td(on) tr td(...
Description	N.CHANNEL POWER MOsFET N-Channel Power MOsFET(Vdss:200v,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOs场效应管(Vdss:200v,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOsFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDs（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...6 VDs = 50V 12 VDs = 125V VDs = 200v 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO sOURCE VOLTAGE vs GATE CHARGE 5-6 IRF244, IRF245, IRF246, IRF247 Test Circuits and Waveforms VDs BVDss L VARY ...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOsFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOsFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250sMD
OCR Text	...s ID(cont) RDs(on) FEATUREs 200v 14A W 0.100W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1...s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs Qgd td(on) tr td(...
Description	N.CHANNEL POWER MOsFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...= -20V VGs = 10V, ID =25A VDs = 200v VDD =200v, ID =25A, RG =2.35 Drain-to-source Breakdown Voltage Temperature Coefficient of Breakdown ...s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls...
Description	Repetitive Avalanche Ratings TRANsIsTORs N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANsIsTORs N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V single N-Channel Hi-Rel MOsFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...4AA/AE) [REF:MIL-PRF-19500/562] 200v, P-CHANNEL Product summary Part Number IRF9230 BVDss -200v RDs(on) 0.80 ID -6.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOsFET transistors. The efficien...
Description	TRANsIsTORs P-CHANNEL(Vdss=-200v, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% sL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, si, POWER, MOsFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited International Rectifier SEME-LAB[Seme LAB]
Part No.	IRF9240 IRF9240-sMD
OCR Text	...e: http://www.semelab.co.uk -200v -200v 20V -11A -7.0A -44A 125W 1W / C -44A -55 to 150C Prelim. 7/00 IRF9240 IRF9240-sMD ELECTRICAL...s THERMAL CHARACTERIsTICs Characteristic RqJC Junction to Case RqCs RqJA TL Case to sink Junction...
Description	CAP CER 250VAC 150PF X7R 1808 P-CHANNEL POWER MOsFET
File Size	25.33K / 2 Page	View it Online	Download Datasheet

For 200v s Found Datasheets File :: 17017 Search Time::2.094ms
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