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  12a 650v Datasheet PDF File

For 12a 650v Found Datasheets File :: 48    Search Time::1.625ms    
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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS12N65FT-O-F-N-B JCS12N65CT-O-C-N-B JCS12N65T
OCR Text ...f) tf Qg Qgs Qgd VDS =480V , ID=12a VGS =10V note 45 VDD=300V,ID=12a,RG=25 note 45 78 102 133 175 233 305 104 160 39 8.5 20 52 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise...
Description N-CHANNEL MOSFET

File Size 1,131.35K  /  10 Page

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    SFP12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. SFP12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced ...
Description Silicon N-Channel MOSFET

File Size 264.84K  /  7 Page

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    IRGP4262DPBF IRGP4262D-EPBF

International Rectifier
Part No. IRGP4262DPBF IRGP4262D-EPBF
OCR Text ...6 8 10 12 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 0123 v f (v) 0 20 40 60 80 100 i f ( a ) -40c 25c 175c fig. 9 - typ. diode forward voltage drop characteristics 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 12a ...
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

File Size 678.44K  /  12 Page

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    IPZ65R045C7

Infineon Technologies AG
Part No. IPZ65R045C7
OCR Text ...ngle pulse e as - - 249 mj i d =12a; v dd =50v avalanche energy, repetitive e ar - - 1.25 mj i d =12a; v dd =50v avalanche current, single p...650vcoolmos?c7powertransistor ipz65r045c7 rev.2.0,2013-04-30 final data sheet 3thermalc...
Description 650v CoolMOS C7 Power Transistor

File Size 1,515.71K  /  15 Page

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    IPP65R045C7

Infineon Technologies AG
Part No. IPP65R045C7
OCR Text ...ngle pulse e as - - 249 mj i d =12a; v dd =50v avalanche energy, repetitive e ar - - 1.25 mj i d =12a; v dd =50v avalanche current, single p...650vcoolmos?c7powertransistor ipp65r045c7 rev.2.0,2013-04-18 final data sheet 3thermalc...
Description 650v CoolMOS C7 Power Transistor

File Size 1,619.51K  /  15 Page

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    IPB65R045C7

Infineon Technologies AG
Part No. IPB65R045C7
OCR Text ...ngle pulse e as - - 249 mj i d =12a; v dd =50v avalanche energy, repetitive e ar - - 1.25 mj i d =12a; v dd =50v avalanche current, single p...650vcoolmos?c7powertransistor ipb65r045c7 rev.2.0,2013-04-18 final data sheet 3thermalc...
Description 650v CoolMOS C7 Power Transistor

File Size 1,749.13K  /  15 Page

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    IPW65R045C7

Infineon Technologies AG
Part No. IPW65R045C7
OCR Text ...ngle pulse e as - - 249 mj i d =12a; v dd =50v avalanche energy, repetitive e ar - - 1.25 mj i d =12a; v dd =50v avalanche current, single p...650vcoolmos?c7powertransistor ipw65r045c7 rev.2.0,2013-04-18 final data sheet 3thermalc...
Description 650v CoolMOS C7 Power Transistor

File Size 1,960.40K  /  15 Page

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    FMH25N50ES

Fuji Electric
Part No. FMH25N50ES
OCR Text ...fmc16n50es fml16n50es *2 0.52 12a 3.70.5v fmp12n50es fmv12n50es fmi12n50es fmc12n50es fml12n50es *2 0.79 8a 3.00.5v fmp08n50e fmv08n50e ...650v 0.97 9a 3.00.5v fmp09n65e fmv09n65e fmi09n65e fmc09n65e 1.47 7a 3.00.5v fmp07n65e fmv07n65e f...
Description This new power MOSFET realized the low switching loss and low switching noise

File Size 439.83K  /  2 Page

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    Micross Components
Part No. ICE60N160B
OCR Text ...rature 6v 5v v gs = 10v i d = 12a v gs - gate to source voltage (v) r ds(on) - on state resistance (m?) i d - drain current (a) i d - drain current (a) r ds(on) - on state resistance (normalized) 10 200 100 50 0.5 20 1 20 30 40 60 ...
Description N-Channel Enhancement Mode MOSFET

File Size 762.00K  /  4 Page

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    Icemos Technology
Part No. ICE60N160B
OCR Text ...rature v gs = 10v i d = 12a 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 v gs - gate - to - source voltage (v) q g - total gate charge (nc) gate charge 480v v ds = 23.8a i d = 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 ...
Description N-Channel Enhancement Mode MOSFET

File Size 483.46K  /  9 Page

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For 12a 650v Found Datasheets File :: 48    Search Time::1.625ms    
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