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  125c-tj Datasheet PDF File

For 125c-tj Found Datasheets File :: 38482    Search Time::1.5ms    
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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ... f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 27 10 4 t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 50 A 10 4 ns t 10 3 ns t tdoff 10 tdoff tdon tr tdon tr 3 10...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...nd Short Circuit Rated to 10s @ 125C, VGE = 15V * Fully isolated printed circuit board mount package * Switching-loss rating includes all "t...TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ...06SG25 DCR806SG24 Tvj = 0 to 125C, IDRM = IRRM = 50mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Outline typ...Tj = 125oC. Gate open circuit. From 67% VDRM to 1500A Gate source 1.5A tr = 0.5s, Tj = 125oC At Tvj ...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ...18SG45 DCR818SG44 Tvj = 0 to 125C, IDRM = IRRM = 75mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Outline typ...Tj = 125oC. From 67% VDRM to1000A Gate source 20V, 10 tr 0.5s. Tj = 125oC. At Tvj = 125oC At Tvj = ...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    FDS6982AS08 FDS6982AS

Fairchild Semiconductor
Part No. FDS6982AS08 FDS6982AS
OCR Text ... A VGS = 10 V, ID = 8.6 A, TJ = 125C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, VDS = 5 V, VDS = 10 V, f = 1.0 MHz ID = 8.6 A ID = 6.3 A VGS = 0 ...
Description Dual Notebook Power Supply N-Channel PowerTrench? SyncFET
Dual Notebook Power Supply N-Channel PowerTrench庐 SyncFET??/a>
Dual Notebook Power Supply N-Channel PowerTrench㈢ SyncFET⑩

File Size 382.34K  /  10 Page

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    FDS6670AS08 FDS6670AS

Fairchild Semiconductor
Part No. FDS6670AS08 FDS6670AS
OCR Text ... 4.5 V, VGS=10 V, ID =13.5A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 13.5 A 1 1.7 -4 7.5 9 10 3 V mV/C 9 11.5 12.5 m ID(on) gFS 50 66 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output ...
Description 30V N-Channel PowerTrench? SyncFET
30V N-Channel PowerTrench庐 SyncFET??/a>
30V N-Channel PowerTrench㈢ SyncFET⑩

File Size 677.21K  /  7 Page

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    CM900DU-24NF

Mitsubishi Electric Semiconductor
Part No. CM900DU-24NF
OCR Text ...= 25C IC = 900A, VGE = 15V Tj = 125C Ic = 900A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 900A, VGE = 15V VCC = 600V, IC = 900A VGE1 = VGE2 = 15V RG = 0.35, Inductive load switching operation IE = 900A IE = 900A, VGE = 0V IGBT part ...
Description HIGH POWER SWITCHING USE

File Size 57.17K  /  5 Page

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    CM800HB-66H

Mitsubishi Electric Semiconductor
Part No. CM800HB-66H
OCR Text ...= 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = -1600A / s Junction to ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 43.37K  /  4 Page

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International Rectifier
Part No. IRFS3107TRRPBF IRFS3107PBF IRFS3107PBF-15
OCR Text ...c v r = 64v, ??? 60 ??? t j = 125c i f = 140a q rr reverse recovery charge ??? 103 ??? nc t j = 25c di/dt = 100a/ s ??? 132 ??? t j ...tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 4.8v bottom 4.5v 0.1 1 10 100 v ds , dr...
Description 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
High Efficiency Synchronous Rectification in SMPS

File Size 370.12K  /  10 Page

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    CM400DY-24NF

Mitsubishi Electric Semiconductor
Part No. CM400DY-24NF
OCR Text ...= 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE1 = VGE2 = 15V RG = 0.73, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1...
Description HIGH POWER SWITCHING USE

File Size 90.19K  /  4 Page

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