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  1.2f Datasheet PDF File

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    FLM1213-12F

Eudyna Devices Inc
Part No. FLM1213-12F
OCR Text 12F X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout ...
Description X, Ku-Band Internally Matched FET

File Size 250.20K  /  4 Page

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    FLM3135-12F

Eudyna Devices Inc
Part No. FLM3135-12F
OCR Text 12F C-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 11.5dB (Typ.) High PAE: add = 40% (Typ.) Low IM3 = -45dBc@Po = 30.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout...
Description C-Band Internally Matched FET

File Size 289.91K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM75TU-12F
OCR Text 12F HIGH POWER SWITCHING USE CM75TU-12F IC ..................................................................... 75A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLIC...
Description IGBT Modules: 600V

File Size 62.46K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM200TU-12F
OCR Text 12F HIGH POWER SWITCHING USE CM200TU-12F IC ................................................................... 200A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLIC...
Description IGBT Modules: 600V

File Size 91.66K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM150TU-12F
OCR Text 12F HIGH POWER SWITCHING USE CM150TU-12F IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLIC...
Description IGBT Modules: 600V

File Size 62.18K  /  4 Page

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    CM75DU-12F

Powerex Power Semiconductors
Part No. CM75DU-12F
OCR Text 12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 75 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1...
Description Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts

File Size 398.01K  /  4 Page

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    CM400DU-12F

Powerex Power Semiconductor...
Powerex Power Semiconductors
Part No. CM400DU-12F
OCR Text 12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 400 Amperes/600 Volts TC MEASURING POINT A D T (4 TYP.) F G2 BE CM C2E1 C L E2 H U J H E2...
Description Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts

File Size 64.03K  /  4 Page

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    FLM0910-12F

List of Unclassifed Manufacturers
ETC
Part No. FLM0910-12F
OCR Text 12F X-Band Internally Matched FET FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: add=25%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM09...
Description X-Band Internally Matched FET

File Size 179.44K  /  5 Page

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    CM600HU-12F CM600HU-12F09

Mitsubishi Electric Semiconductor
Part No. CM600HU-12F CM600HU-12F09
OCR Text 12F HIGH POWER SWITCHING USE CM600HU-12F IC ................................................................... 600A VCES ............................................................ 600V Insulated Type 1-elements in a pack APPLIC...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 125.00K  /  4 Page

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    CM150TU-12F CM150TU-12F09 CM150TU-12F12

Mitsubishi Electric Semiconductor
Part No. CM150TU-12F CM150TU-12F09 CM150TU-12F12
OCR Text 12F HIGH POWER SWITCHING USE CM150TU-12F IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLIC...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 130.92K  /  4 Page

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