1.29a pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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1.29a Datasheet PDF File

For 1.29a Found Datasheets File :: 506 Search Time::0.86ms
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				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Fast CoPack IGBT VCES = 1200V VCE(sat) 3.3V...29A See Fig. 2, 5 -- 3.0 -- IC = 17A, T J = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 2...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH8250 IRH7250
OCR Text	...electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also ca...29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. D...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	313.63K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text	... to the last page 26 16 104 150 1.2 20 500 26 15 5.0 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063 ...29a. Basic Gate Charge Waveform Fig 29b. Gate Charge Test Circuit www.irf.com 11 IRHM725...
Description	200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
File Size	266.93K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp. Power MOSFET IRF[International Rectifier]
Part No.	IRFP044N
OCR Text	...230 28 12 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...29A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, ...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 53A条） 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
File Size	101.37K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BSS223PW
OCR Text	...ummary VDS RDS(on) ID 3 -20 1.2 -0.39 SOT-323 V A 2 1 VSO05561 Drain pin 3 Type BSS 223PW Package SOT-323 Ordering ...29A Drain-source on-state resistance VGS =-4.5, ID =-0.39A Page 2 2002-07-04 Preliminar...
Description	OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
File Size	72.89K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8360 IRHM7360
OCR Text	...electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also ca...29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. D...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET? TRANSISTOR
File Size	318.57K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDP16AN08A0 FDB16AN08A0
OCR Text	...le Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 58 44 9 Figure 4 117 135 0.9 -55 to...29A, VGS = 6V ID = 58A, VGS = 10V, TJ = 175oC 2 0.013 0.019 0.032 4 0.016 0.029 0.037 V Dynamic ...
Description	N-Channel PowerTrench MOSFET 75V, 58A, 16m?/a> N-Channel PowerTrench MOSFET 75V, 58A, 16mз N-Channel PowerTrench MOSFET 75V/ 58A/ 16m N-Channel PowerTrench ?MOSFET 75V, 58A, 16mOhm
File Size	203.97K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3412 IRFU3412
OCR Text	...0 0.95 20 6.4 -55 to + 175 300(1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V V/ns C Diode Characteristics Symbol IS ISM ...29A, VGS = 0V TJ = 125C, IF = 29A di/dt = 100A/s D S www.irf.com 1 1/22/02 IRFR/U34...
Description	100V Single N-Channel HEXFET Power MOSFET in a D-Pak package SMPS MOSFET
File Size	137.36K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA07N4452M RA07N4452M-01 RA07N4452M-E01
OCR Text	...5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by se...29A - 1.5W + 0.02W) x 4.5C/W = Tcase + 5.9 C Tch2 = Tcase + (9.6V x 1.40A - 7.0W + 1.5W) x 2.4C/W = ...
Description	440-520MHz 7.5W 9.6V PORTABLE RADIO
File Size	60.69K / 9 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	CXA1616N
OCR Text	...nc (positive/negative polarity, 1 to 5Vp-p For capacitor input 1.5 to 5Vp-p) -- H. separate sync (positive/negative polarity, 1 to 5Vp-p) --...29A current. V 29A x (T2/T1) x (200 + 270) VCC 200 6 20k 8k 6 6 EHC 3.0, 4.8V 1k ...
Description	Sync Discriminator for CRT Displays
File Size	333.48K / 20 Page	View it Online	Download Datasheet

For 1.29a Found Datasheets File :: 506 Search Time::0.86ms
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