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  1.0v-3.3v 12a Datasheet PDF File

For 1.0v-3.3v 12a Found Datasheets File :: 1594    Search Time::4.453ms    
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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX6ASJ-3
OCR Text ...Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2...0V VDS = 0V Conditions Ratings -150 20 -6 -24 -6 -6 -24 35 -55 ~ +150 -55 ~ +150 Unit V V A...
Description MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 48.70K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6ASJ-3
OCR Text ...Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2...0V VDS = 0V Conditions Ratings -150 20 -6 -24 -6 -6 -24 35 -55 ~ +150 -55 ~ +150 Unit V V A...
Description HIGH-SPEED SWITCHING USE

File Size 43.54K  /  4 Page

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    FX6ASJ-3-T13

Renesas Electronics Corporation
Part No. FX6ASJ-3-T13
OCR Text ...A (Package name: MP-3A) 3 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Motor control, Lamp control, Solen...0V Ciss Tch = 25C VDD = -80V VGS = -10V RGEN = RGS = 50 td(off) 3 2 102 7 5 3 2 tr td(...
Description High-Speed Switching Use Pch Power MOS FET

File Size 166.40K  /  7 Page

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    FX6KMJ-3 FX6KMJ-3-A8

Renesas Electronics Corporation
Part No. FX6KMJ-3 FX6KMJ-3-A8
OCR Text 1.00 Aug.20.2004 Features * * * * * Drive voltage : 4 V VDSS : - 150 V rDS(ON) (max) : 0.53 ID : - 6 A Recovery Time of the Integrated ...0V 5 3 2 Ciss Tch = 25C VDD = - 80V VGS = -10V 3 RGEN = RGS = 50 7 5 2 td(off) 102 7 ...
Description High-Speed Switching Use Pch Power MOS FET

File Size 197.58K  /  7 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6KMJ-3
OCR Text ... 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 1 GATE 2 DRAIN 3 SOURCE...0V VDS = 0V Conditions 2.6 0.2 Ratings -150 20 -6 -24 -6 -6 -24 25 -55 ~ +150 -55 ~ +150 2...
Description HIGH-SPEED SWITCHING USE

File Size 49.43K  /  4 Page

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    IKP03N120H208

Infineon Technologies AG
Part No. IKP03N120H208
OCR Text ...Package PG-TO-247-3 PG-TO-220-3-1 G E * PG-TO-247-3 * * * PG-TO-220-3-1 Type IKW03N120H2 IKP03N120H2 Maximum Ratings Pa...0V, f=1MHz V C C = 96 0 V, I C = 3 A V G E =15V PG- TO- 220- 3-1 PG-TO-247-3-21 7 13 nH 205 24 7 22 ...
Description HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 375.48K  /  15 Page

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    IGP03N120H208 IGW03N120H2

Infineon Technologies AG
Infineon Technologies A...
Part No. IGP03N120H208 IGW03N120H2
OCR Text ...g G03H1202 G03H1202 PG-TO220-3-1 G E * PG-TO-247-3 * * * Type IGW03N120H2 IGP03N120H2 Maximum Ratings Parameter Packag...0V, f=1MHz V C C = 96 0 V, I C = 3 A V G E =15V PG- TO- 220- 3-1 PG-TO-247-3 7 13 nH 205 24 7 22 nC ...
Description HighSpeed 2-Technology

File Size 340.03K  /  13 Page

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    Picor
Part No. PI2127
OCR Text ...g output Applications N+1 Redundant Power Systems Servers & High End Computing Telecom Systems High-side Active ORing Package Inf...0V, VD=VS Parameter Symbol Min Typ Max Units Conditions Control Circuit Supply (S to PG) Operati...
Description 12 Amp Full-Function Active ORing Solution

File Size 1,221.19K  /  19 Page

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    SGD04N60

Infineon Technologies AG
Part No. SGD04N60
OCR Text 1 mar-00 fast s-igbt in npt-technology g c e ? 75% lower e off compared to previous generation combined with low conduction losses ? ...0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =4a t j =2...
Description Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 271.27K  /  12 Page

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