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  1 2 4m-bit Datasheet PDF File

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    M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP
OCR Text ... PIN CONFIGURATION (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 Vss DQ15 DQ14 VssQ DQ13 DQ12 VddQ DQ11 DQ10 VssQ DQ9 DQ8 VddQ NC DQ...
Description 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
From old datasheet system

File Size 1,456.01K  /  45 Page

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    MBM29LV004BC-12 MBM29LV004BC-12PNS MBM29LV004BC-12PTN MBM29LV004BC-12PTR MBM29LV004BC-70 MBM29LV004BC-70PNS MBM29LV004BC

FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM29LV004BC-12 MBM29LV004BC-12PNS MBM29LV004BC-12PTN MBM29LV004BC-12PTR MBM29LV004BC-70 MBM29LV004BC-70PNS MBM29LV004BC-70PTN MBM29LV004BC-70PTR MBM29LV004BC-90 MBM29LV004BC-90PNS MBM29LV004BC-90PTN MBM29LV004BC-90PTR MBM29LV004TC MBM29LV004TC-12 MBM29LV004TC-12PNS MBM29LV004TC-12PTN MBM29LV004TC-12PTR MBM29LV004TC-70 MBM29LV004TC-70PNS MBM29LV004TC-70PTN MBM29LV004TC-70PTR MBM29LV004TC-90 MBM29LV004TC-90PNS MBM29LV004TC-90PTN MBM29LV004TC-90PTR MBM29LV004BC
OCR Text ...ypically erased and verified in 1.0 second. (If already completely preprogrammed.) The devices also feature a sector erase architecture. The...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 (Marking Side) MBM29LV008TA/MBM29LV008BA Stan...
Description 4M (512K X 8) BIT

File Size 268.30K  /  52 Page

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    MCF5206

Motorola, Inc
Part No. MCF5206
OCR Text ... bus arbitration, and IEEE 1149.1 Test (JTAG) support are included. A sophisticated debug interface supports both background-debug mode and ...2 separate memory banks -- Support for page-mode DRAMs and extended-data-out (EDO) DRAMs -- Allows e...
Description MCF5206 Integrated Microprocessor
MCF5206 Integrated Microprocessor

File Size 208.18K  /  8 Page

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    MPC2605 MPC2605ZP66 MPC2605ZP66R

MOTOROLA[Motorola, Inc]
Micro Electronics
Part No. MPC2605 MPC2605ZP66 MPC2605ZP66R
OCR Text ...r to provide a 256KB, 512KB, or 1 MB Level 2 cache with one, two, or four chips on a 64-bit PowerPC bus. * * * * * * * * * * * * * * * * Single Chip L2 Cache for PowerPC 66 MHz Zero Wait State Performance (2-1-1-1 Burst) Four-Way Set Associ...
Description Integrated Secondary Cache for PowerPC Microprocessors

File Size 287.91K  /  30 Page

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    AT52BR3224AT AT52BR3224AT-70CI AT52BR3228AT-70CI AT52BR3224A AT52BR3224A-70CI AT52BR3228A AT52BR3228A-70CI AT52BR3228AT

ATMEL[ATMEL Corporation]
Part No. AT52BR3224AT AT52BR3224AT-70CI AT52BR3228AT-70CI AT52BR3224A AT52BR3224A-70CI AT52BR3228A AT52BR3228A-70CI AT52BR3228AT
OCR Text 1.2 mm) CBGA Package * 2.7V to 3.3V Operating Voltage Flash * 2.7V to 3.3V Read/Write * Access Time - 70 ns * Sector Erase Architecture * * * - Sixty-three 32K WordSectors with Individual Write Lockout - Eight 4K Word Sectors with Indi...
Description 32 Mbit Single-plane Flash combined with a 8M bit SRAM
32 Mbit Single-plane Flash combined with a 4M bit SRAM
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory

File Size 350.23K  /  46 Page

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    HM5212325FBPC HM5212325FBPC-B60

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5212325FBPC HM5212325FBPC-B60
OCR Text 1-Mword x 32-bit x 4-bank PC/100 SDRAM ADE-203-1122C (Z) Rev. 1.0 May. 12 , 2000 Description The Hitachi HM5212325FBPC is a 128-Mbit SDR...2 variations of burst sequence Sequential (BL = 4/8/full page) Interleave (BL = 4/8) Programmable ...
Description    128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90

File Size 57.42K  /  13 Page

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    HM5212325F HM5212325F-B60 HM5212325FBP-B60

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5212325F HM5212325F-B60 HM5212325FBP-B60
OCR Text 1-Mword x 32-bit x 4-bank PC/100 SDRAM ADE-203-1053A (Z) Rev. 1.0 Oct. 18, 1999 Description The Hitachi HM5212325F is a 128-Mbit SDRAM o...2 variations of burst sequence Sequential (BL = 4/8/full page) Interleave (BL = 4/8) Programmable ...
Description 128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM

File Size 59.91K  /  13 Page

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    HM5225325F-B60 HM5225645F HM5225645F-B60

http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM ADE-203-1014C (Z) Rev. 1.0 Oct. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word x 64-bit x 4-bank. The Hitachi HM5225325F is a ...
Description 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM

File Size 76.58K  /  16 Page

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    K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text ...atency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 107.61K  /  10 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text ...atency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQM for masking * Auto & self...
Description 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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