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  0.61a Datasheet PDF File

For 0.61a Found Datasheets File :: 167    Search Time::1.078ms    
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    TY Semiconductor Co., L...
Part No. KDB3652
OCR Text 0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2...61a q g(tot) = 41nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single ...
Description rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V

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    FDP3652 FDI3652 FDB3652

Fairchild Semiconductor
Part No. FDP3652 FDI3652 FDB3652
OCR Text ...ture 61 43 9 Figure 4 182 150 1.0 -55 to 175 A A A A mJ W W/oC o Ratings 100 20 Units V V C Thermal Characteristics RJC RJA RJ...61A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 30A, VGS = 6V ID = 61A, VGS = 10V, TJ = 17...
Description N-Channel PowerTrench MOSFET 100V/ 61A/ 16m
N-Channel PowerTrench MOSFET 100V, 61A, 16mз

File Size 208.05K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL
OCR Text ...s * Fast switching * rDS(ON) = 0.0052 (Typ), VGS = 10V * rDS(ON) = 0.0085 (Typ), VGS = 4.5V * Qg (Typ) = 30nC, VGS = 5V * Qgd (Typ) = 11nC ...61A, VGS = 4.5V 1 3 V 0.0052 0.0060 0.0085 0.0095 Dynamic Characteristics CISS COSS CRSS Qg(TOT...
Description N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRL3102S
OCR Text ... VDSS = 20V G S RDS(on) = 0.013W ID = 61A Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide des...
Description Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)\u003d0.013瓦特,身份证\u003d 61A条)
Power MOSFET(Vdss=20V Rds(on)=0.013w Id=61A)

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    FDB365208 FDB3652F085

Fairchild Semiconductor
Part No. FDB365208 FDB3652F085
OCR Text ...tance junction to case to-263 1.0 thermal resistance junction to ambient to-263 (note 2) 62 ...61a, v gs = 10v - 0.014 0.016 ? i d = 30a, v gs = 6v - 0.018 0.026 i d = 61a, v gs = 10v, t ...
Description N-Channel PowerTrench? MOSFET 100V, 61A, 16mΩ

File Size 416.54K  /  11 Page

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    Fairchild Semiconductor, Corp.
Part No. FDB3652NL
OCR Text ...o case to-220, to-263, to-262 1.0 o c/w r ja thermal resistance junction to ambient to-220, to-263, to-262 (note 2) 62 o c/w r ja thermal ...61a, v gs = 10v - 0.014 0.016 ? i d = 30a, v gs = 6v - 0.018 0.026 i d = 61a, v gs = 10v, t ...
Description N-Channel Power Trench MOSFET, 100V, 61A, 0.016 Ohms 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 201.36K  /  11 Page

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    IRL3102

International Rectifier
Part No. IRL3102
OCR Text ...ion 89 w linear derating factor 0.71 w/c v gs gate-to-source voltage 10 v v gsm gate-to-source voltage 14 v (start up transient, tp = 1...61a t o -22 0 ab description l advanced process technology l optimized for 4.5v-7.0v gate drive l id...
Description 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 101.35K  /  7 Page

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    Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Part No. ZXMP62M832TA ZXMP62M832
OCR Text ...nnel V(BR)DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this...61A V GS =-2.7V, I D =-0.31A V DS =-10V,I D =-0.31A g fs C iss C oss C rss t d(on) tr t d(off) tf...
Description MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET 1300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 282.25K  /  7 Page

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