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  0.6 1.0 1.4 1.8ghz Datasheet PDF File

For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 1094    Search Time::6.875ms    
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    BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W BAR63-04 BAR63 BAR63-02W BAR63-05 BAR63-05W BAR63-06 BAR63-06W

INFINEON[Infineon Technologies AG]
Part No. BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W BAR63-04 BAR63 BAR63-02W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
OCR Text ...rallel pair, leadless LS(nH) 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 0.4 Marking G G GG G G4s G4s G5s G5s G6s G6s P3s 1 Jun-27-2003 BAR63... Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse vol...
Description Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN diode for high-speed switching of RF signals
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package

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    HDH-12803CHD HDH-12806CID HDH-12810CID HDH-12820CID HDH-02003DHD HDH-09020GID HDH-03010GID HDH-01703CH HDH-09003GHD HDH-

Agilent (Hewlett-Packard)
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
Part No. HDH-12803CHD HDH-12806CID HDH-12810CID HDH-12820CID HDH-02003DHD HDH-09020GID HDH-03010GID HDH-01703CH HDH-09003GHD HDH-02210AI HDH-00803GHD HDH-00810GID HDH-00820GID HDH-00937CI HDH-01503GH HDH-01503GHD HDH-01510GID HDH-01520GID HDH-01530CI HDH-01537CI HDH-01703CHD HDH-01706CID HDH-01710CID HDH-01720CID HDH-01730CID HDH-02220AID HDH-02249AI HDH-03003GHD HDH-03020GID HDH-04003BH HDH-06003GHD HDH-06010GID HDH-06020GID HDH-09006GID HDH-09010GID HDCS-1000 HDCS-1100
OCR Text ...ance Maximum Input Power (Note) 0.5 to 14.5 GHz 50 ohms 2 to 50 W Operating temperature range Operating relative humidity -10c to +65c 95% M...6 7 1 Series Name: HD (Directional Couplers) 2 Type of Connector H: Indicates the HRM (SMA) Series ...
Description Integrated CMOS Image Sensor with Digital Output and Timing Controller
Current Monitoring Relay; Contacts:SPDT; Contact Carry Current:10A; Control Voltage:120VAC; Relay Mounting:Plug-In; Mounting Type:Plug-In; Relay Terminals:8-Pin Octal; Terminal Type:8-Pin Octal RoHS Compliant: Yes
Phase Monitoring Relay; Contacts:SPDT; Contact Carry Current:10A; Control Voltage:480V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal
Couplers with Connectors (H Type) 耦合与连接器(H型)
Couplers with Connectors (H Type) 耦合与连接器H型)
   Couplers with Connectors (H Type)

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    BFP196W Q62702-F1576

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196W Q62702-F1576
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6.5 17.5 11.5 - IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k...
Description From old datasheet system
NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications)
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 60.65K  /  7 Page

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    BFP196 Q62702-F1320

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196 Q62702-F1320
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6.5 16 10 - IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 61.07K  /  7 Page

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    BFR181W Q62702-F1491

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181W Q62702-F1491
OCR Text 0.5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marki...6 8 0.32 0.22 0.3 - GHz pF 0.5 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-bas...
Description NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system

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    BFR181 Q62702-F1314

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181 Q62702-F1314
OCR Text 0.5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marki...6 8 0.26 0.18 0.3 - GHz pF 0.45 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-ba...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

File Size 57.16K  /  7 Page

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    BFS480 Q62702-F1531

SIEMENS[Siemens Semiconductor Group]
Part No. BFS480 Q62702-F1531
OCR Text ...one) at collector currents from 0.2mA to 8mA * fT = 7GHz F = 1.5dB at 900MHz * Two (galvanic) internal isolated Transistors in one packa...6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collec...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
From old datasheet system

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    HFA3096 HFA3096B HFA3127B HFA3128 HFA3128B HFA3046 HFA3046B HFA3127 FN3076

INTERSIL[Intersil Corporation]
Part No. HFA3096 HFA3096B HFA3127B HFA3128 HFA3128B HFA3046 HFA3046B HFA3127 FN3076
OCR Text ...One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temper...6 2 0.1 0.3 0.85 130 50 -1.5 1 100 10 0.5 0.95 - 12 8 10 5.5 40 20 - 18 12 20 6 2 0.1 0.3 0...
Description From old datasheet system
Ultra High Frequency Transistor Arrays

File Size 57.18K  /  9 Page

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    HFA3127 HFA3127MJ_883 HFA3127_883 FN3967 HFA3127/883

INTERSIL[Intersil Corporation]
Part No. HFA3127 HFA3127MJ_883 HFA3127_883 FN3967 HFA3127/883
OCR Text ...)CBO CONDITIONS IC = 100A, IE = 0 GROUP A SUBGROUPS 1 2, 3 Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 100A, IB = 0 1 2, 3 Collecto...6 7 1K 5% 8 Q3 Q4 Q2 Q5 Q1 16 15 14 13 12 11 10 9 1K 5% 1K 5% 1K 5% 10.5V 0.5V Spec Number 4 ...
Description    Ultra High Frequency Transistor Array
From old datasheet system

File Size 53.41K  /  7 Page

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6 8 0.63 0.33 1.8 - GHz pF 0.9 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 1094    Search Time::6.875ms    
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