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  0.4v s Datasheet PDF File

For 0.4v s Found Datasheets File :: 59472    Search Time::5.969ms    
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    2SA2071

ROHM[Rohm]
Part No. 2sA2071
OCR Text ...yp. : -200mV at IC = -2A, IB = -0.2A) 3) strong discharge power for inductive load and capacitance load. 4) Complements the 2sC5824 !Externa...4V Emitter cut-off current - -200 -500 mV IC= -2A, IB= -0.2A 1 Collector-emitter saturation voltage ...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

File Size 42.30K  /  4 Page

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    2SA2087

ROHM[Rohm]
Part No. 2sA2087
OCR Text ...ns (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 ...4V IC= -1.0A IB= -100mA VCE= -2V IC= -100mA VCE= -10V IE=100mA f=10MHz VCB= -10V IE=0mA f=1MHz IC= -...
Description Power transistor

File Size 81.04K  /  4 Page

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    2SA2088

ROHM[Rohm]
Part No. 2sA2088
OCR Text 0.5A) 2sA2088 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at ...4V IC= -100mA IB= -10mA VCE= -2V IC= -50mA VCE= -10V IE=100mA f=10MHz VCB= -10V IE=0A f=1MHz IC= -50...
Description Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)

File Size 81.84K  /  4 Page

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2sA2091s 2sA2091sTPQ
OCR Text ...pically (Typ. : -200mV at IC = -0.5A, IB = -50mA) 3) strong discharge power for inductive load and capacitance load. 4) Complements the 2sC5...4V IC= -500mA IB= -50mA VCE= -2V IC= -100mA VCE= -10V IE=100mA f=10MHz VCB= -10V IE=0mA f=1MHz IC= -...
Description 1000 mA, 60 V, PNP, si, sMALL sIGNAL TRANsIsTOR sPT, sC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

File Size 81.85K  /  4 Page

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    2SA2093

ROHM[Rohm]
Part No. 2sA2093
OCR Text .... : -200mV at IC = -1.0A, IB = -0.1A) 3) strong discharge power for inductive load and capacitance load. 4) Complements the 2sC5880 !Externa...4V IC= -1.0A IB= -100mA VCE= -2V IC= -100mA VCE= -10V IE=100mA f=10MHz VCB= -10V IE=0mA f=1MHz IC= -...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

File Size 81.67K  /  4 Page

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    2SA2113

ROHM[Rohm]
Part No. 2sA2113
OCR Text ...yp. : -200mV at IC = -1A, IB = -0.1A) 3) strong discharge power for inductive load and capacitance load. 4) Complements the 2sC5916 !Externa...4V Emitter cut-off current - -200 -400 mV IC= -1A, IB= -0.1A 1 Collector-emitter saturation voltage ...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

File Size 42.97K  /  4 Page

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    2SB1172 2SB1172A

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1172 2sB1172A
OCR Text ....2 2.00.2 3.50.2 Unit: mm 0 to 0.15 2.50.2 12.60.3 7.20.3 1.10.1 Parameter Collector-base voltage (Emitter open) 2sB1172 2sB...4V Collector power dissipation PC (W) (1)TC=Ta (2)Without heat sink (PC=1.3W) -5 -8 -80...
Description silicon PNP epitaxial planar type

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2sB1181 2sB1260 2sB1241
OCR Text ...ions (Units : mm) 2sB1260 4.5+0.2 -0.1 1.60.1 2sB1181 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 0.50.1 1.5 +0....4V IC/IB=-500mA/-50mA VCE=-3V, IC=-0.1A Conditions !Packaging specifications and hFE Package Cod...
Description Power Transistor

File Size 78.57K  /  3 Page

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    2SB566 2SB566A 2SB566AK 2SB566K HITACHILTD.-2SB566AK

HITACHI[Hitachi Semiconductor]
Part No. 2sB566 2sB566A 2sB566AK 2sB566K HITACHILTD.-2sB566AK
OCR Text ...6A(K) Max -- -- -- -1 200 -- -1.0 -1.2 -- -- -- -- Min -70 -60 -5 -- 60 35 -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 15 0.3 3.0 2.5 Max ...4V -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2 Collector current I...
Description silicon PNP Triple Diffused

File Size 32.51K  /  6 Page

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2sB631 2sB631K 2sD600 2sD600K
OCR Text ...t symbol V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ICBO IEBO IE=(-)10A, IC=0 VCB=(-)50V, IE=0 VEB=(-)4V, IC=0 Conditions B631, D600 B631K, D600K B631, D600 B631K, D600K Ratings min (-)100 (-)120 (-)100 (-)120 (-)5 (-)1 (-)1...
Description NPN Epitaxial Planar silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

File Size 114.39K  /  4 Page

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