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IRF[International Rectifier]
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| Part No. |
IRFN044
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| OCR Text |
0.040 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also fea... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)
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| File Size |
175.47K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFP2907Z
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| OCR Text |
...t
Max.
170 120 90 680 310 2.0 20 520 690 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Ene... |
| Description |
AUTOMOTIVE MOSFET
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| File Size |
310.16K /
9 Page |
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SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
IRFN044SMD
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| OCR Text |
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax.
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
22.17K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRFMJ044
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| OCR Text |
...FET TECHNOLOGY
(R)
RDS(on)
0.04
ID
35A*
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined... |
| Description |
POWER MOSFET SURFACE MOUNT (D3 PAK)
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| File Size |
236.74K /
7 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFN340SMD
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| OCR Text |
0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
BVDSS ID(cont) RDS(on)
FEATURES
400V 10A W 0.55W
0 .7 6 (... |
| Description |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
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| File Size |
23.56K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRFM360
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| OCR Text |
...FET TECHNOLOGY
(R)
RDS(on)
0.20
ID
23A
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined ... |
| Description |
400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY
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| File Size |
511.44K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRFM260
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| OCR Text |
...
(R)
TRANSISTOR
200Volt, 0.060, HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high tran... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
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| File Size |
284.37K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFM210A
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| OCR Text |
...DSS = 200 V RDS(on) = 1.5 ID = 0.77 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=2... |
| Description |
Advanced Power MOSFET (200V, 1.5ohm, 0.77A)
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| File Size |
264.79K /
7 Page |
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Vishay Beyschlag
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| Part No. |
IHLP-5050FD-013.3/-20ERE3
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| OCR Text |
...00khz, .25v, 0a typical typical 0.10 0.47 0.50 60 120 0.15 0.53 0.60 55 118 0.22 0.63 0.70 53 112 0.30 0.70 0.80 48 72 0.33 0.83 0.90 46 65 0.40 0.90 1.0 44 64 0.47 1.0 1.2 41 63 0.56 1.2 1.4 37 62 0.68 1.4 1.6 35 60 0.82 1.6 1.9 33 50 1.0 ... |
| Description |
1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
141.59K /
4 Page |
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it Online |
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