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INFINEON[Infineon Technologies AG]
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| Part No. |
BSP324
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| OCR Text |
...reshold voltage, VGS = V DS
ID=94A
Zero gate voltage drain current
V DS=400V, V GS=0, T j=25C V DS=400V, V GS=0, T j=125C
A 0.01 10 14.3 13.6 0.1 10 100 22 25 nA
Gate-source leakage current
V GS=20V, VDS=0
Drain-source on-st... |
| Description |
SIPMOS Power-Transistor
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| File Size |
107.82K /
8 Page |
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POWERINT[Power Integrations, Inc.]
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| Part No. |
EPR-00015
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| OCR Text |
...imum short circuit current is 0.94A
EPR-00015
Page 3 of 24
Engineering Prototype Report
3.0 Schematic
3
L1 1mH R2 D1 D2 R1
L J1- 1
T1 EE16 3.7 mH D5 UF4003
10 +
1 1
L2 Bead(2uH)
J2- 2
4.7K
85-265V AC * *
N... |
| Description |
3W, Universal Input, Single Output, Isolated Converter with TNY254 (EP-15)
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| File Size |
467.82K /
24 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA8Z60 IRHNA3Z60 IRHNA4Z60 IRHNA7Z60
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| OCR Text |
...75A, VGS =12V ISD 75A, di/dt 94A/s, VDD 30V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Do... |
| Description |
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
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| File Size |
121.96K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNB8Z60 IRHNB3Z60 IRHNB4Z60 IRHNB7Z60
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| OCR Text |
...75A, VGS =12V ISD 75A, di/dt 94A/s, VDD 30V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Do... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
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| File Size |
116.72K /
8 Page |
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it Online |
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PROTEC[Protek Devices]
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| Part No. |
PLC03-3.3
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| OCR Text |
...0ns 61000-4-5 (Surge): 8/20s - 94A, L4(Line-Gnd), 48A, L1(Power) & 48A, L4(Line-Line)
SO-8
FEATURES
100A (2/10s) per Bellcore GR1089(Intra-Building) ESD Protection > 40 kilovolts 1800 Watts Peak Pulse Power per Line (tp = 8/20... |
| Description |
LOW CAPACITANCE TVS ARRAY
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| File Size |
64.21K /
4 Page |
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it Online |
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PROTEC[Protek Devices]
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| Part No. |
PLC03-33 PLC03-3.3
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| OCR Text |
...0ns 61000-4-5 (Surge): 8/20s - 94A, L4(Line-Gnd), 48A, L1(Power) & 48A, L4(Line-Line) FEA TURES 100A (2/10s) per Bellcore GR1089(Intra-Building) ESD Protection > 40 kilovolts 1800 Watts Peak Pulse Power per Line (tp = 8/20s) LOW CAPACI... |
| Description |
LOW CAPACITANCE TVS ARRAY
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| File Size |
75.71K /
4 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SFS2955
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| OCR Text |
... DS V =-8V 4 DS
5
@Nts:I =94A oe D -. 0 0 4 8 1 2 1 6
00 1 0
11 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SFS2955
Fig 7. Breakdown Voltage vs. Temperature
12 . 25 .
P-CHANNEL POWER MOSFET
Fig 8... |
| Description |
Advanced Power MOSFET
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| File Size |
200.76K /
7 Page |
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it Online |
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Price and Availability
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