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Fairchild Semiconductor, Corp.
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| Part No. |
FD6M033N06
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| OCR Text |
...tarting TJ = 25C, VD = 40V, L = 0.2mH, IAS = 55.5A
Parameter Junction to Case Thermal Resistance
(Note1)
Min. -
Typ. -
Max. 3.9...73A Synchronous Rectifier Module
Electrical Characteristics TC = 25C, Unless Otherwise Specified
... |
| Description |
60V/73A Synchronous Rectifier Module; Package: EPM15-AA; No of Pins: 15; Container: Rail 73 A, 60 V, 0.0033 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
559.70K /
9 Page |
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Advanced Power Technology Ltd.
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| Part No. |
APT60M75L2FLL
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| OCR Text |
...istance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain curre...73a 0.075 w power mos 7 tm fredfet
dynamic characteristics 050-7098 rev- 9-2001 apt's devices... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
65.57K /
2 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN6R0-30YL
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| OCR Text |
... drain-source voltage 003aac631 0 20 40 60 80 100 0 50 100 150 200 t mb (c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0 003aac633 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) i d (a) limit r dson ... |
| Description |
N-channel 30 V 6 m logic level MOSFET in LFPAK
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| File Size |
200.38K /
14 Page |
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Infineon Technologies AG
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| Part No. |
SPP73N03S2L-10
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| OCR Text |
...s =0v, t j =175c i dss - - 0.01 10 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state re...73a - 0.96 1.28 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 26.9 40.4... |
| Description |
73 A, 30 V, 0.0131 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, 3 PIN
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| File Size |
101.13K /
8 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75L2FLL
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| OCR Text |
0.075W
POWER MOS 7TM
FREDFET
TO-264 Max
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po...73A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
52.76K /
2 Page |
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Infineon Technologies AG
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| Part No. |
IPB10N03L IPP10N03L
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| OCR Text |
...n. RthJC RthJA -
Values typ. 0.9 max. 1.4 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Pa...73A VR =15V, IF=lS, diF /dt=100A/s
Symbol
Conditions min.
Values typ. 63 1290 500 130 1.4 7... |
| Description |
OptiMOS Buck converter series
OptiMOS Buck converter series
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 9.2mOhm, 73A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 9.2mOhm, 73A, LL
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| File Size |
451.91K /
8 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75L2LL
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| OCR Text |
0.075W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...73A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
51.60K /
2 Page |
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Supertex, Inc.
SUTEX[Supertex, Inc]
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| Part No. |
TN2510 TN2510N8 TN2510ND
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| OCR Text |
... TO-243AA
ID (continuous)* 0.73A
ID (pulsed) 5.0A
Power Dissipation @ TA = 25C 1.6W
jc
ja
IDR* 0.73A
IDRM 5.0A
C/W
15
C/W
78
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm ... |
| Description |
N-Channel Enhancement-Mode Vertical DMOS FETs 0.73 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
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| File Size |
471.40K /
4 Page |
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