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SANYO[Sanyo Semicon Device]
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| Part No. |
2SC4976 2SA1875
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| OCR Text |
...(typ). High breakdown voltage : vceo200v(min). Large current capacitance. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process.
2.3
0.5
0.85 0.7
0.8... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications
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| File Size |
31.08K /
5 Page |
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it Online |
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SANYO
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| Part No. |
2SA1406 2SC3600
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| OCR Text |
...MHz. * High breakdown voltage : vceo200v. * Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). * Complementary PNP and NPN types. * Adoption of FBET process.
JEDEC : TO-126
( ) : 2SA1406
Spec... |
| Description |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output Applications
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| File Size |
135.16K /
4 Page |
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it Online |
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SANYO
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| Part No. |
2SC3416
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| OCR Text |
...s
* High breakdown voltage : vceo200v. * Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). * Adoption of FBET process.
JEDEC : TO-126
( ) : 2SA1352
Specifications
Ab... |
| Description |
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output Applications
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| File Size |
148.29K /
4 Page |
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it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SC3502
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| OCR Text |
...]
* High breakdown voltage : vceo200v. * Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. * Adoption of FBET process
JEDEC : TO-126
( ) : 2SA1380
Specificat... |
| Description |
NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display, Video Output Applications
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| File Size |
155.43K /
4 Page |
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it Online |
Download Datasheet |
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