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TriQuint Semiconductor, Inc.
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| Part No. |
TGC4704-FC
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| OCR Text |
...2 v typical ? technology: 0.13 um phemt with front-side cu/sn pillars ? chip dimensions: 3.38 x 1.37 x 0.38 mm ? automotive radar ? e-band...tm = 2.4e+7 hrs 1 / 2 / 3 / thermal resistance, jc vd = 4.0 v vg1 = -0.4 v vg2 = +0.2 v id = 0.240... |
| Description |
38 to 77 GHz Doubler and Medium Power Amplifier 76000 MHz - 77000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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| File Size |
450.13K /
12 Page |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGC4703-FC
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| OCR Text |
...2 v typical ? technology: 0.13 um phemt with front-side cu/sn pillars ? chip dimensions: 1.16 x 2.85 x 0.38 mm the triquint tgc4703-fc is ...tm) vs channel temperature 1 / for a median life of 2.4e+7 hours, power dissipati on is limited to ... |
| Description |
19 to 38 GHz Doubler 19000 MHz - 19250 MHz RF/MICROWAVE FREQUENCY DOUBLER
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| File Size |
336.95K /
11 Page |
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it Online |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
ST223C08CEN2L
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| OCR Text |
...t (a) conduction period m axim um allowable heatsink temperature (c) st223 c..c s eries (single side c oo led) r (d c) = 0 .17 ...tm 0 20 40 60 80 100 120 140 160 0 20406080100 m a xim um reve rse rec ove ry c urr ent - irr (a)... |
| Description |
745 A, 800 V, SCR, TO-200AB
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| File Size |
212.10K /
9 Page |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
ST303C12LCP2L ST303C08LCK2 ST303C08LCK2L
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| OCR Text |
... nt (a) conduction period maxim um allowable heatsink temp erature ( c) st30 3c ..l se rie s (d ouble side c ooled) r (d c ) = 0.0...tm 500 a 300 a 100 a 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 1... |
| Description |
995 A, 1200 V, SCR, TO-200AC 995 A, 800 V, SCR, TO-200AC
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| File Size |
188.22K /
10 Page |
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it Online |
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