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  tmos Datasheet PDF File

For tmos Found Datasheets File :: 674    Search Time::1.422ms    
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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text tmos E-FET.TM Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient desi...
Description tmos E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MTD5P06E

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06E
OCR Text tmos E-FET.TM Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient desi...
Description tmos POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

File Size 207.75K  /  10 Page

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    MTD5P06V ON2511 MTD5P06V-T4

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06V ON2511 MTD5P06V-T4
OCR Text tmos V.TM Power Field Effect Transistor DPAK for Surface Mount MTD5P06V Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate tmos V is a new technology designed to achieve an on-resistance area product about one-half th...
Description 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
tmos POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system

File Size 244.68K  /  10 Page

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    MTE125N20E MTE125N20E_D ON2529

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTE125N20E MTE125N20E_D ON2529
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also ...
Description From old datasheet system
tmos POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

File Size 227.99K  /  8 Page

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    MTY55N20E MTY55N20E_D ON2720

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
Part No. MTY55N20E MTY55N20E_D ON2720
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a d...
Description tmos POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system

File Size 231.14K  /  8 Page

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    MBRV7030CTL MBRV7030CTL_D ON0481

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MBRV7030CTL MBRV7030CTL_D ON0481
OCR Text ... overall value. (c) Motorola tmos Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MBRV7030CTL TYPICAL ELECTRICAL CHARACTERISTICS I F , INSTANTANEOUS FORWARD CURRENT (AMPS) I F , INSTANTANEOUS FORWARD CURRENT (AMPS) 1...
Description TOOLS, ELECTRONIC KITS RoHS Compliant: NA
SWIRCHMODE Schottky Power Rectifier(D3PAK Power Surface Mount Pakage)
70 AMPERES 30 VOLTS
From old datasheet system
SWIRCHMODE⑩ Schottky Power Rectifier(D3PAK Power Surface Mount Pakage)

File Size 154.71K  /  8 Page

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    MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E

ETC
Motorola, Inc
ON Semiconductor
Part No. MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
OCR Text tmos E-FET.TM Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this adv...
Description 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
tmos POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
tmos E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate

File Size 275.97K  /  10 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
Part No. MTP15N05E
OCR Text ...ancement-mode silicon gate this tmos power fet is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ~~ switching ...
Description Power Field Effect Transistor

File Size 88.04K  /  2 Page

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    MTP10N10EL ON2537

MOTOROLA[Motorola, Inc]
Part No. MTP10N10EL ON2537
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a d...
Description From old datasheet system
tmos POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

File Size 221.09K  /  8 Page

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    MTP10N10E ON2538

MOTOROLA[Motorola, Inc]
Part No. MTP10N10E ON2538
OCR Text tmos IV Power Field Effect Transistor This advanced "E" series of tmos power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain-to- source diodes with fa...
Description From old datasheet system
tmos POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

File Size 237.69K  /  8 Page

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For tmos Found Datasheets File :: 674    Search Time::1.422ms    
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