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TT electronics Semelab, Ltd.
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| Part No. |
1N5551D3A-JQRS.GRPC 1N5551D3B-JQRS.GRPC
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| OCR Text |
...g power supply applications space level and high-reliability screening options av ailable absolute maximum ratings (t a = 25c u...charge .grpb group b destructive mechanical samples .gbdm (12 pi eces) group c charge .grpc gr... |
| Description |
3 A, 440 V, SILICON, RECTIFIER DIODE HERMETIC SEALED, CERAMIC, DLCC3, VARIANT A, 2 PIN 3 A, 440 V, SILICON, RECTIFIER DIODE HERMETIC SEALED, CERAMIC, DLCC3, VARIANT B, 2 PIN
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| File Size |
284.48K /
4 Page |
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Intersil
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| Part No. |
FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160D FSJ9160D1 FSJ9055R FSJ9055D1
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| OCR Text |
...ned for commercial and military space applications. enhanced power mosfet immunity to single event effects (see), single event gate rupture ...charge q g(tot) v gs = 0v to -20v v dd = -30v, i d = 55a - - 250 nc gate charge at 12v q g(12) v ... |
| Description |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
66.63K /
8 Page |
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Micrel Semiconductor, Inc.
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| Part No. |
FSGYC164D1 FSGYC164R4 FSGYC164R3
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| OCR Text |
...ns in a commercial or military space environment. star*power mosfets offer the system designer both extremely low r ds(on) and gate charge allowing the development of low loss power subsystems. star*power gold fets combine this electr... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 69A I(D) | SMT 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 69A条(丁)|贴片
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| File Size |
106.59K /
7 Page |
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it Online |
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