| |
|
 |
Fairchild Imaging
|
| Part No. |
CCD133A
|
| OCR Text |
...ns pass through the transparent sili- con creating hole-electron pairs. the photon generated electrons are accumulated in the photosites. the amount of charge accumu- lated in each photosite is a linear function of the incident illuminati... |
| Description |
1024 Element High Speed Linear Image Sensor
|
| File Size |
832.49K /
12 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Fairchild Imaging
|
| Part No. |
CCD134
|
| OCR Text |
...ns pass through the transparent sili- con creating hole-electron pairs. the photon generated electrons are accumulated in the photosites. the amount of charge accumu- lated in each photosite is a linear function of the incident illuminati... |
| Description |
1024 Element Linear Image Sensor
|
| File Size |
612.61K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
SGS Thomson Microelectronics
|
| Part No. |
AN271
|
| OCR Text |
... bg 1.250v band-gap voltage of sili- con. in this case v in * is practically stable in tempera- ture and centered respect ttl input levels (v lmax = 0.8v. v hmin =2v). the idle current i abs in the worst case, that is when v in =v lmax = 0... |
| Description |
HIGH/SIDE MONOLITHIC SWITCH IN MULTIPOWER/BCD TECHNOLOGY
|
| File Size |
99.25K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
|
| Part No. |
K3N4VU3000D-DGC
|
| OCR Text |
...x 8 bit. it is fabricated using sili- con gate cmos process technology. this device operates with 3.0v or 3.3v power supply, and all inputs and outputs are ttl compatible. because of its asynchronous operation, it requires no external clo... |
| Description |
8M-Bit (1M x 8) CMOS MASK ROM Data Sheet
|
| File Size |
44.34K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
|
| Part No. |
K3N9VU4000A-GC
|
| OCR Text |
... 16 bit. it is fabricated using sili- con gate cmos process technology. this device operates with 3.0v or 3.3v power supply, and all inputs and outputs are ttl compatible. because of its asynchronous operation, it requires no external clo... |
| Description |
128M-Bit (8Mx16) CMOS MASK ROM Data Sheet
|
| File Size |
45.21K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
|
| Part No. |
K3P9VU4000A-GC
|
| OCR Text |
... 16 bit. it is fabricated using sili- con gate cmos process technology. this device includes page read mode function, page read mode allows 8 words of data to read fast in the same page, ce and a 3 ~ a 22 should not be changed. this de... |
| Description |
128M-Bit (8Mx16) CMOS MASK ROM Data Sheet
|
| File Size |
60.02K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Maxwell Technologies, Inc
|
| Part No. |
8408
|
| OCR Text |
...h dac contains a highly stable, sili con-chromium, thin-film, r-2r resistor ladder network and eight pairs of current steering switches. these switches are in series with each ladder resistor and are single-pole, double-throw nmos transisto... |
| Description |
Quad 8-Bit Multiplying CMOS D/A Converter with Memory
|
| File Size |
470.98K /
19 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
