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For row column Found Datasheets File :: 13551    Search Time::1.5ms    
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    IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL

ETC[ETC]
Part No. IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text ...edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8,...column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write operati...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 466.90K  /  55 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ...edge * Internal bank for hiding row access/precharge * Power supply IS42S81600A IS42S16800A IS42S32400A * LVTTL interface * Programmable bur...column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write and bur...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ...edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8,...column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write and bur...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...mum 25ns. 2. Changed Sequential row Read operation - The Sequential Read 1 and 2 operation is allowed only within a block 3. Changed invalid...column address of 517. 4. Added a new card-type package : K9S5608U0M-MCB0 1. Changed Endurance : 1mi...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...I/O 7 A7 A16 A24 column Address row Address (Page Address) NOTE : column Address : Starting Address of the Register. 00h Command(Read) : Defines the starting address of the 1st half of the register. 01h Command(Read) : Defines the starti...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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Part No. GM71V18160CJ-7 GM71V18160CT-6
OCR Text ... inputs data input/ data output row address strobe read/write enable power (+3.3v) ground no connection ucas, lcas column address strobe oe output enable absolute maximum ratings* note: operation at or above absolute maximum ratings can a...
Description x16 Fast Page Mode DRAM

File Size 105.99K  /  10 Page

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    Hynix
Part No. HY57V641620LTP HY57V641620STP
OCR Text ... cas activity a0 ~ a11 address row address: ra0 ~ ra11, column address: ca0 ~ ca7 auto-precharge flag: a10 ras , cas , we row address strobe, column address strobe, write enable ras , cas and we define the operation refer function truth...
Description Synchronous DRAM Memory 64Mbit

File Size 156.31K  /  13 Page

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    PROMOS TECHNOLOGIES INC
Part No. V59C1512804QBF37
OCR Text ...arge a 10 /ap a 10 /ap a 10 /ap row address a 0 ~ a 13 a 0 ~ a 13 a 0 ~ a 12 column address a 0 ~ a 9, a 11 a 0 ~ a 9 a 0 ~ a 9 ddr part number 3 promos technologies v59c1512(404/804/164)qb v59c1512(404/804/164)qb rev. 1.3 novembe...
Description 64M X 8 DDR DRAM, 0.5 ns, PBGA60

File Size 1,189.75K  /  76 Page

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    HY5R256HCXXX HY5R256HC745

Hynix Semiconductor
Part No. HY5R256HCXXX HY5R256HC745
OCR Text ...nd data buses with independent row and column control yield over 95% bus efficiency. the direct rdram's 32 banks support up to four simultaneous transactions. system oriented features for mobile, graphics and large memory systems incl...
Description RDRAM

File Size 2,710.80K  /  64 Page

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