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rg-55 u Datasheet PDF File

For rg-55 u Found Datasheets File :: 11106 Search Time::1.688ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BuK9614-55
OCR Text	...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Measured from upper edge of drain tab to centre of die Measured from source lead soldering point...55 MAX. 200 uNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description	TrenchMOS transistor Logic level FET
File Size	51.52K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BuK9635-55 BuK9635-56
OCR Text	...D = 30 V; ID = 15 A; VGS = 5 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead sol...55 MAX. 45 uNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Dera...
Description	TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS transistor Logic level FET
File Size	68.83K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BuK7614-55 BuK7614-55A
OCR Text	... = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead sol...55 MAX. 200 uNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description	TrenchMOS(tm) transistor Standard level FET TrenchMOS TM transistor Standard level FET
File Size	50.92K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BuK7880-55 BuK7880-55A
OCR Text	...D = 30 V; ID = 7 A; VGS = 10 V; RG = 10 ; Tj = 25C REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = -55 to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain...
Description	TrenchMOS TM transistor Standard level FET TrenchMOS transistor standard level FET
File Size	49.22K / 9 Page	View it Online	Download Datasheet

				Philips
Part No.	BuK9520-55
OCR Text	...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm fr...55 MAX. 110 uNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description	TrenchMOS TM transistor
File Size	47.69K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BuK9508-55
OCR Text	...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package t...55 MAX. 500 uNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description	TrenchMOS TM transistor Logic level FET
File Size	48.14K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BuK9624-55
OCR Text	...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead sol...55 MAX. 80 uNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Dera...
Description	TrenchMOS TM transistor
File Size	50.78K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BuK98150-55
OCR Text	...DD = 30 V; ID = 5 A; VGS = 5 V; RG = 10 ; Tj = 25C REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = -55 to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain...
Description	TrenchMOS TM transistor
File Size	50.22K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BuK9880-55
OCR Text	...DD = 30 V; ID = 7 A; VGS = 5 V; RG = 10 ; Tj = 25C REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = -55 to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain...
Description	TrenchMOS transistor Logic level FET
File Size	67.55K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BuK98150-55
OCR Text	...DD = 30 V; ID = 5 A; VGS = 5 V; RG = 10 ; Tj = 25C REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = -55 to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain...
Description	TrenchMOS transistor Logic level FET Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk
File Size	68.07K / 9 Page	View it Online	Download Datasheet

For rg-55 u Found Datasheets File :: 11106 Search Time::1.688ms
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