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rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1421 Search Time::2.594ms
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				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...210 98 320 550 700 uNITS V V A mA V V V nA A A V nC nC ns ns ns ns J J J Collector to Emitter Bre...
Description	45 A, 600 V, uFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, uFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
File Size	141.01K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text	...E = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 15 13 105 55 115 510 330 MAX 250 3.0 2.7 2.0 7.0 250 162 210 350 200 21 18 135 73 600 500 uNITS V A mA V V V nA A V...
Description	CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	162.96K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60A4 HGTP20N60A4
OCR Text	...CE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V L = 100H, VCE = 600V IC = 20A, VCE = 300V IC = 20A, VCE = 300V VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energ...
Description	600V, SMPS Series N-Channel IGBTs
File Size	137.64K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60C3D
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...210 98 550 700 uNITS V A mA V V V nA A A V nC nC ns ns ns ns J J Collector to Emitter Breakdown V...
Description	3.3V 36-mc CPLD 45A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	120.19K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MGP20N60u
OCR Text	... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN ...
Description	Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
File Size	116.62K / 6 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 9: PIN 1. ...
Description	Insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system
File Size	140.16K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGP7N60E
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 9: PIN 1. ...
Description	Insulated Gate Bipolar Transistor
File Size	118.28K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5024BVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT pF 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
File Size	61.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.21K / 4 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1421 Search Time::2.594ms
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