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Diodes Incorporated Diodes, Inc.
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Part No. |
DMG4800LK3-13
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OCR Text |
...A nA V m S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = 250A ...pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production ... |
Description |
N-CHANNEL ENHANCEMENT MODE MOSFET 10 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA GREEN, PLASTIC, TO-252, 3 PIN
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File Size |
226.67K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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Part No. |
AOI4184
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OCR Text |
... 4.5 nc q gd 6.4 nc t d(on) 6.4 ns t 17.2 ns output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =20v,...pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency an... |
Description |
Single MV MOSFETs (40V - 400V)
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File Size |
354.14K /
6 Page |
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it Online |
Download Datasheet |
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Microsemi
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Part No. |
APT25GT120BRG
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OCR Text |
... 3265 965 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 i... |
Description |
IGBT w/o anti-parallel diode
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File Size |
113.66K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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