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  mnos Datasheet PDF File

For mnos Found Datasheets File :: 169    Search Time::2.969ms    
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    CXK1024P

ETC
Sony Corporation
Part No. CXK1024P
OCR Text mnos 2K (256 X 8)-BIT NON-VOLATILE MEMORY 4 CE SCK DI DO 1 2 3 4 VSS(+5V) 8 7 BUSY 6 OSC GND 5 2 6 OSC BUSY CE 1 7 DI 3 8-BIT SHIFT REGISTER ADDRESS DECODER ADDRESS LATCH 256 X 8 MEMORY OUTPUT B...
Description mnos 2K (256 X 8)-BIT NON-VOLATILE MEMORY

File Size 10.56K  /  1 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. HN58V66AI HN58V65API-10 HN58V65API-10E HN58V65AT-10SR HN58V65AT-10SRE HN58V66A-SR HN58V66AFPI-10 HN58V66AFPI-10E HN58V66API-10 HN58V66API-10E HN58V66AT-10SR HN58V66AT-10SRE HN58V66ATI-10 HN58V66ATI-10E HN58V65AFPI-10 HN58V65AFPI-10E HN58V65ATI-10E HN58V65AI HN58V65A-SR HN58V65ATI-10
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features * Single supply: 2.7 to 5.5 V * Access ...
Description Memory>EEPROM>Parallel EEPROM
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

File Size 212.98K  /  28 Page

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    hitachi
Part No. HN58V256ASERIES 58V256A
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features * Single 3 V supply: 2.7 to 5.5 V * Acc...
Description From old datasheet system

File Size 182.38K  /  26 Page

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    hitachi
Part No. HN58C65SERIES 58C65
OCR Text ...reliability, employing advanced mnos memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming function to make its erase and write operations faster. Features * * * * * * * * * * * * Single 5 V...
Description 8192-word ′ 8-bit Electrically Erasable and Programmable CMOS
From old datasheet system

File Size 97.23K  /  16 Page

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    hitachi
Part No. HN58C256ASERIES 58C256A
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features * Single 5 V supply: 5 V 10% * Access t...
Description 32768-word ′ 8-bit Electrically Erasable and
From old datasheet system

File Size 189.10K  /  26 Page

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    hitachi
Part No. HN58S256AISERIES 58S256AI
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster. Features * Single 3 V supply: 2.2 to 3.6 V * Access time:...
Description From old datasheet system

File Size 146.24K  /  19 Page

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    hitachi
Part No. HN58S256ASERIES 58S256A
OCR Text ...word x 8-bit employing advanced mnos memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster. Features * * * * * * * * * * * * * * Single 2.2 to 3....
Description From old datasheet system

File Size 98.01K  /  19 Page

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    hitachi
Part No. HN58V1001SERIES 58V1001
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster. Features * Single 3 V supply: 2.7 V to 5.5 V * Access ti...
Description From old datasheet system

File Size 182.28K  /  24 Page

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    hitachi
Part No. HN58V65AISERIES 58V65AI
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features * Single supply: 2.7 to 5.5 V * Access ...
Description From old datasheet system

File Size 144.38K  /  28 Page

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    ETC[ETC]
AUSTIN[Austin Semiconductor]
Part No. AS58C1001SF AS58C1001DCJ-20883C AS58C1001DCJ-20IT AS58C1001DCJ-25_IT AS58C1001DCJ-15_883C AS58C1001DCJ-15_IT AS58C1001DCJ-15_XT AS58C1001DCJ-15883C AS58C1001DCJ-15IT AS58C1001DCJ-15XT AS58C1001DCJ-20_883C AS58C1001DCJ-20_IT AS58C1001DCJ-20_XT AS58C1001DCJ-20XT AS58C1001DCJ-25_XT AS58C1001DCJ-25883C AS58C1001DCJ-25IT AS58C1001DCJ-25XT AS58C1001F AS58C1001SF-25XT AS58C1001 AS58C1001DCJ-25_883C AS58C1001F-15_883C AS58C1001F-15_IT AS58C1001F-15_XT AS58C1001F-15883C AS58C1001F-15IT AS58C1001F-15XT AS58C1001F-20_883C AS58C1001F-20_IT AS58C1001F-20_XT AS58C1001F-20883C AS58C1001F-20IT AS58C1001F-20XT AS58C1001F-25_883C AS58C1001F-25_IT AS58C1001F-25_XT AS58C1001F-25883C AS58C1001F-25IT AS58C1001F-25XT AS58C1001SF-15_883C AS58C1001SF-15_IT AS58C1001SF-15_XT AS58C1001SF-15883C AS58C1001SF-15IT AS58C1001SF-15XT AS58C1001SF-20_883C AS58C1001SF-20_IT AS58C1001SF-20_XT AS58C1001SF-20883C AS58C1001SF-20IT AS58C1001SF-20XT AS58C1001SF-25_883C AS58C1001SF-25_IT AS58C1001SF-25_XT AS58C1001SF-25883C AS58C1001SF-25IT
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. ...
Description EEPROM

File Size 239.74K  /  19 Page

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For mnos Found Datasheets File :: 169    Search Time::2.969ms    
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