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  medium-gain Datasheet PDF File

For medium-gain Found Datasheets File :: 4697    Search Time::1.36ms    
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    AM2729-125

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. AM2729-125
OCR Text ...istor specifically designed for medium pulse S-Band radar output and driver applications. This device is characterized at 50 sec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and tempe...
Description RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

File Size 108.68K  /  6 Page

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    HPN2907A PN2907A

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HPN2907A PN2907A
OCR Text ...rpose amplifier and high speed, medium-power switching applications. Features * Low Collector Saturation voltage * High Speed Switching ...Gain & Collector Current 1000 Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date : 2002.04...
Description PNP EPITAXIAL PLANAR TRANSISTOR

File Size 36.46K  /  4 Page

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    PSS8050 PSS8050D

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PSS8050 PSS8050D
OCR Text medium power 25 V transistor Product specification Supersedes data of 2002 Nov 18 2004 Aug 10 Philips Semiconductors Product specific...gain DC current gain PSS8050C PSS8050D VCEsat VBEsat VBEon fT Cc collector-emitter saturation voltag...
Description PSS8050; NPN medium power 25 V transistor

File Size 97.19K  /  10 Page

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    2SC2411K 2SC1741S 2SC4097

ROHM[Rohm]
Part No. 2SC2411K 2SC1741S 2SC4097
OCR Text Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S !Features 1) High ICMax. ICMax. = 0.5mA 2) Low VCE(sat). Optimal for low...GAIN : hFE 0.5 500 200 Ta=100C 75C 50C 25C 0C C -25 C -50 TRANSITION FREQUENCY : fT(...
Description Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (32V, 0.5A)
Medium Power Transistor (32V 0.5A)
Medium Power Transistor (32V/ 0.5A)

File Size 72.43K  /  3 Page

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    4N25 4N26 4N28 4N27 4N25A

Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. 4N25 4N26 4N28 4N27 4N25A
OCR Text ...nomical Optoisolator Choice for Medium Speed, Switching Applications * Meets or Exceeds All JEDEC Registered Specifications * To order devic...Gain (IC = 2 mA, VCE = 5 V) Collector-Emitter Capacitance (f = 1 MHz, VCE = 0) Collector-Base Capaci...
Description 6-Pin DIP Optoisolators Transistor Output

File Size 280.78K  /  6 Page

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    ICL7611 ICL7611BCPA ICL7611DCBA ICL7611DCBA-T ICL7611DCPA ICL7612 ICL7612BCPA ICL7612DCBA ICL7612DCBA-T ICL7612DCPA FN29

INTERSIL[Intersil Corporation]
Part No. ICL7611 ICL7611BCPA ICL7611DCBA ICL7611DCBA-T ICL7611DCPA ICL7612 ICL7612BCPA ICL7612DCBA ICL7612DCBA-T ICL7612DCPA FN2919
OCR Text ...ET = +5V, Low Bias IQ SET = 0V, Medium Bias IQ SET = -5V, High Bias Channel Separation Slew Rate (AV = 1, CL = 100pF, VIN = 8VP-P) Rise Time...Gain AVOL VO = 0.1V, RL = 1M 25 Full Unity Gain Bandwidth Input Resistance Common Mode Rejection Rat...
Description Op Amp, CMOS, Rail-to-Rail I/O, Programmable Icc, 1.4MHz, Low Voltage 1-8Vdc, Low Bias 0.05nA
Op Amp, CMOS, Rail-to-Rail Output, 1.4MHz, Low Voltage 1-8Vdc, Programmable Icc, Low Bias 0.05nA
1.4MHz, Low Power CMOS Operational Amplifiers
From old datasheet system

File Size 99.44K  /  10 Page

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    MC145012DW MC145012

Motorola, Inc
Part No. MC145012DW MC145012
OCR Text ...ring most of the standby state. Medium gain is selected during a local-smoke condition. High gain is used during pushbutton test. During standby, the special monitor circuit which periodically checks for degraded chamber sensitivity uses hi...
Description Photoelectic Smoke Detector IC with I/O and Temporal Pattern Horn Driver
Photoelectric Smoke Detector IC With I/O and Temporal Pattern Horn Driver

File Size 174.84K  /  12 Page

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    BCP56T1 BCP56T1SERIES

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. BCP56T1 BCP56T1SERIES
OCR Text ... package, which is designed for medium power surface mount applications. * High Current: 1.0 Amp * The SOT-223 package can be soldered using...Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) hFE All Part Types BCP56T1 BCP56-10T1 BCP...
Description MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 中功率NPN硅高当前的晶体管表面贴装

File Size 200.38K  /  6 Page

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