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m0-5 Datasheet PDF File

For m0-5 Found Datasheets File :: 2555 Search Time::1.828ms
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				Renesas Electronics Corporation
Part No.	RJK5030DPP-M0 RJK5030DPP-M0-T2
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, T...5 20 5 28.5 4.38 150 -55 to +150 Unit V V A A A W C/W C C R07DS0227EJ0100 Rev.1.00 Dec 14, 201...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	74.11K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK1560DPP-M0-T2
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching Features Capable of 2.5 V gate drive Low on-resistance RDS(on) = 0.043 typ. (at ID = 10 A, VGS = 4 V, Ta = 25C) Low leakage current High speed switching R07DS0270EJ0100 Rev.1.0...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	76.68K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJU60C3WDPP-M0 RJU60C3WDPP-M0T2
OCR Text	m0 600v - 60a - dual diode fast recovery diode features ? fast reverse recovery time: t rr = 90 ns typ. (at i f = 30 a, di/dt = 100...5 0.5 10.0 0.3 6.5 0.3 .2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2 .6 ...
Description	600V - 60A - Dual Diode Fast Recovery Diode
File Size	60.40K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP60D0DPP-M0-T2 RJP60D0DPP-M0-15
OCR Text	M0 Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 3...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	73.97K / 7 Page	View it Online	Download Datasheet

				Renesas Technology
Part No.	RJP60D0DPP-M0
OCR Text	m0 silicon n channel igbt high speed power switching features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (i c = 22 a, v ge = 15 v, ta = 25c) ? gate to em...
Description	Silicon N Channel IGBT
File Size	91.49K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK6066DPP-M0 RJK6066DPP-M0-T2
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1802-0100 Rev.1.00 Jul 02, 2009 Features * Low on-resistance * Low leaka...5 20 5 20 4 0.87 28.5 4.38 150 -55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1802-0100 Rev.1....
Description	Silicon N Channel MOS FET High Speed Power Switching 5 A, 600 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
File Size	77.34K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH30H1DPP-M0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? high speed ...5 v typ. ? low leak current: i ces = 1 ? a max. ? built-in fast recovery diode: v f = 1.4 v...
Description	Silicon N Channel IGBT High speed power switching
File Size	147.22K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4002DPP-M0 RJK4002DPP-M0T2 RJK4002DPP-M012 RJK4002DPP-M0-15
OCR Text	m0 400v - 3a - mos fet high speed power switching features ? low on-state resistance r ds(on) = 2.4 ? typ. (at i d = 1.5 a, v gs = 10 v, ta = 25 ? c) ? high speed switching outline renesas package code: prss0003af-a (pack...
Description	400V - 3A - MOS FET High Speed Power Switching
File Size	96.91K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60D3DPP-M0
OCR Text	m0 silicon n channel igbt application: inverter features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (at i c = 17 a, v ge = 15 v, ta = 25c) ? built in fas...
Description	Silicon N Channel IGBT Application: Inverter
File Size	77.75K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60M1DPP-M0
OCR Text	m0 600 v - 8 a - igbt application: inverter features ? short circuit withstand time (8 ? s typ.) ? low collector to emitter satura...5 ? , inductive load) outline renesas package code: prss0003af-a (package name: to-220fl) 1 2 ...
Description	600 V - 8 A - IGBT Application: Inverter
File Size	48.91K / 4 Page	View it Online	Download Datasheet

For m0-5 Found Datasheets File :: 2555 Search Time::1.828ms
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