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For igg Found Datasheets File :: 347    Search Time::1.187ms    
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    RA45H4047M RA45H4047M-01 RA45H4047M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA45H4047M RA45H4047M-01 RA45H4047M-E01
OCR Text ...MHz * Low-Power Control Current igg=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 ...
Description MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO 三菱射频MOSFET模块400 - 470MHz512.5V移动通信

File Size 91.54K  /  9 Page

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    RA60H1317M1A RA60H1317M1A-101 RA60H1317M1A08

Mitsubishi Electric Semiconductor
Part No. RA60H1317M1A RA60H1317M1A-101 RA60H1317M1A08
OCR Text ...MHz * Low-Power Control Current igg=1mA (typ) at VGG=5V * Module Size: 67 x 18 x 9.9 mm 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (FIN) PACKAGE CO...
Description RF MOSFET MODULE 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 102.04K  /  9 Page

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    RA55H3847M RA55H3847M-101

Mitsubishi Electric Semiconductor
Part No. RA55H3847M RA55H3847M-101
OCR Text ...MHz * Low-Power Control Current igg=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 ...
Description RF MOSFET MODULE 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 109.41K  /  8 Page

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    RA07M4452MSA-101

Mitsubishi Electric Semiconductor
Part No. RA07M4452MSA-101
OCR Text ...MHz * Low-Power Control Current igg=1mA (typ) at VGG=3.5V * Module Size: 30 x 9.6 x 5.3 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoH...
Description 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 129.08K  /  8 Page

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    RA07M1317MSA-101

Mitsubishi Electric Semiconductor
Part No. RA07M1317MSA-101
OCR Text ...MHz * Low-Power Control Current igg=1mA (typ) at VGG=3.5V * Module Size: 30 x 9.6 x 5.3 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoH...
Description 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 127.42K  /  8 Page

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    RA55H4047M-101

Mitsubishi Electric Semiconductor
Part No. RA55H4047M-101
OCR Text ...MHz * Low-Power Control Current igg=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 ...
Description RF MOSFET MODULE 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 87.71K  /  8 Page

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    RA18H1213G RA18H1213G-01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA18H1213G RA18H1213G-01
OCR Text ...GHz * Low-Power Control Current igg=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 ...
Description 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO 1.24 - 1.30GHz 18W 12.5V阶段制造。对于移动通信

File Size 93.29K  /  9 Page

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    NJG1309VB2

New Japan Radio
njr
Part No. NJG1309VB2
OCR Text ...GG Iidle IDD2,3 IDD1(H) IDD1(L) igg ICONT VDD2,3=3.0V, Iidle=130mA VDD2,3=3.0V, RF OFF VDD2,3=3.0V,Iidle=130mA Pout=21dBm VDD2,3=3V,Pout=21dBm VSTB=0V,VDD2,3=0V +VGG=2.0V +VCONT=2.0V CONDITIONS VDD2,3=3.0V MIN 1.85 2.7 2.9 2.4 0.0 0.0 0.6 1...
Description TRANSMITTING POWER AMPLIFIER GaAs MMIC

File Size 570.22K  /  17 Page

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