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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
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| Part No. |
BUZ104SL-4
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| OCR Text |
... Symbol Values 3.2 Unit A
ID idpuls
12.8
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
52 dv/dt 6
mJ
ID = 3.2 A, VDD = 25 V, RGS = 25 L = 10.15 mH, Tj = 25 C
Reverse d... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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| File Size |
89.18K /
8 Page |
 View
it Online |
Download Datasheet
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BUZ104S Q67040-S4007-A2
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| OCR Text |
...sed drain current
TC = 25 C
idpuls
54
E AS
Avalanche energy, single pulse
ID = 13.5 A, VDD = 25 V, RGS = 25 L = 571 H, Tj = 25 C
mJ
52
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by T... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
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| File Size |
126.55K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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