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  id-0.70a Datasheet PDF File

For id-0.70a Found Datasheets File :: 361    Search Time::2.907ms    
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    NTE2966

NTE Electronics
Part No. NTE2966
OCR Text ... . . . . . . 20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.83C/W Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Drain-Source ...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 20.42K  /  2 Page

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    NTE2967 NTE2966

NTE[NTE Electronics]
Part No. NTE2967 NTE2966
OCR Text ... . . . . . . 20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.83C/W Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Drain-Source ...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 20.43K  /  2 Page

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    IXTK140N20P

IXYS[IXYS Corporation]
Part No. IXTK140N20P
OCR Text ...m Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 17...0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 10 g Symbol Test Condit...
Description Discrete MOSFETs: Standard N-channel Types
PolarHT Power MOSFET

File Size 560.39K  /  5 Page

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    CXA2543R

SONY[Sony Corporation]
Part No. CXA2543R
OCR Text ...RIX S/H 25 XVST VPAL 26 VST PAL ID DEMOD PAL SW R-BRT SUBBRIGHT POL SW VGATE WIDE VTST 29 XEN PSIGBRIGHT 32 VD SIG. CENTER 50 SCLK ...0.5Vp-p (100% white level from the sync tip). VDD1 20k 4 H.FIL OUT 0.8V 4 Outputs ...
Description Decoder/Driver/Timing Generator for Color LCD Panels

File Size 1,762.12K  /  78 Page

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    IRF5802 IRF5802TR

IRF[International Rectifier]
Part No. IRF5802 IRF5802TR
OCR Text ...SFET RDS(on) max 1.2@VGS = 10V ID 0.9A VDSS 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Character...
Description 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power MOSFET(Vdss=150V, Id=0.9A)
Power MOSFET(Vdss=150V/ Id=0.9A)
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 125.73K  /  8 Page

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    CXA2503 CXA2503AR

SONY[Sony Corporation]
Part No. CXA2503 CXA2503AR
OCR Text ...BBRIGHT VWIN VPAL COLOR HUE PAL ID PAL SW SCLK FB G FB B 31 VD2 DEMOD POL SW VGATE WIDE VTST 30 VD1 FRP 29 ...0.5Vp-p (100% white level from the sync tip). VDD2 20k 6 6 H.FIL OUT 2.5V Outputs the...
Description Decoder/Driver/Timing Generator for Color LCD Panels

File Size 1,920.22K  /  72 Page

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    FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3

INTERSIL[Intersil Corporation]
Part No. FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.063in (1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in "Absolute Maximum Rat...
Description 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 59.37K  /  9 Page

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    FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547

INTERSIL[Intersil Corporation]
Part No. FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.063in (1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in "Absolute Maximum Rat...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

File Size 48.81K  /  8 Page

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    IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
OCR Text ...SS = 900V RDS(on) = 8.0 G ID = 1.7A S Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect...
Description Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 307.93K  /  10 Page

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    IRF6217 IRF6217TR

IRF[International Rectifier]
Part No. IRF6217 IRF6217TR
OCR Text ...SFET RDS(on) max 2.4@VGS =-10V ID -0.7A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Chara...
Description -150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)

File Size 104.12K  /  8 Page

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For id-0.70a Found Datasheets File :: 361    Search Time::2.907ms    
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